Abstract:Submitted for the MAR11 Meeting of The American Physical Society Strain Engineering of the thermal conductance in Si nanowires A. PAUL, K. MIAO, M. LUISIER, G. KLIMECK, Purdue University — Silicon nanowires (SiNWs) are promising semiconductor structures spanning a wide range of applications from CMOS devices to thermoelectric modules. Recently, SiNWs have shown tremendous potential as good thermoelectric materials with ZT coefficients larger than 1 [1]. This figure of merit can be further improved by tuning the thermal conductivity of the SiNWs. Here, we show that strain provides a natural way of tuning the thermal conductance of ultra-scaled SiNWs. We utilize a modified Valence Force Field (MVFF) model [2] to calculate the phonon dispersion in these SiNWs under strain and extract their thermal conductance using Landauer’s approach. Our investigation shows that uniaxial tensile and hydrostatic compressive help reduce the thermal conductance of SiNWs. For example, a 3nm X 3nm, <100> oriented nanowire undergoing a 2% uniaxial tensile strain exhibits a thermal conductance reduced up to 2.6%, whereas a compressive hydrostatic strain of 2% gives a reduction of around 8%. Thus, strain engineering can prove beneficial in tuning the thermal conductance in Si nanowires and offers an efficient way to further improve the ZT figure of merit. Finanacial support from MSD, SRC, MIND and NSF, computational support from nanoHUB.org under NCN. Refs: [1] A. I. Hochbaum et al., ’Enhanced thermoelectric performance of rough silicon nanowires’, Nature 451, no. 7175, pp. 163, 2008. [2] A Paul, M Luisier and G Klimeck, ’Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires.’, arXiv:1009.6188v2[cond-mat.mes-hall]. Abhijeet Paul Purdue University Date submitted: 27 Nov 2010 Electronic form version 1.4

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

Stress field effects on phonon properties in spatially confined semiconductor nanostructures

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Influence of pre-stress fields on electric properties of semiconductor nanowires

Effects of Heterogeneity and Prestress Field on Phonon Properties of Semiconductor Nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Electron–acoustic Phonon Interaction and Mobility in Stressed Rectangular Silicon Nanowires

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Modeling Phonon Thermal Conductivity in Spatially Confined GaN Nanofilms under Stress Fields and Phonon Surface Scattering

Modification of the elastic properties of nanostructures with surface charges in applied electric fields

Surface Stress Effects On The Yield Strength In Nanotwinned Polycrystal Face-Centered-Cubic Metallic Nanowires

Molecular Dynamics Simulation of the Elastic Properties of Metal Nanowires in a Transverse Electric Field

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Strain Engineering of the thermal conductance in Si nanowires