Influence of pre-stress fields on electric properties of semiconductor nanowires

linli zhu
DOI: https://doi.org/10.1063/1.4912685
2015-01-01
AIP Conference Proceedings
Abstract:The effects of pre-stress field on the electric properties such as electron-acoustic phonon interaction and mobility are investigated for a rectangular silicon nanowire. The continuum elastic model is employed to calculate the spatially confined phonon dispersion relation. The electron-acoustic phonon scattering rate and the carrier mobility are obtained for stressed silicon nanowire. The numerical results show that the pre-stress field has a significant influence on the phonon properties, leading to completely altering the electron-acoustic phonon interaction. Under the tensile (compressive) pre-stress, the carrier mobility is reduced (enhanced) that is sensitive to the strength of corresponding stress fields.
What problem does this paper attempt to address?