Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Strain Impacts on Electron Mobility in Silicon Nanowires

Electron–acoustic Phonon Interaction and Mobility in Stressed Rectangular Silicon Nanowires

Influence of pre-stress fields on electric properties of semiconductor nanowires

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Influence of strain on the conduction band structure of strained silicon nanomembranes

Phonon-limited mobility for electrons and holes in highly-strained silicon

Valence band variation in Si (110) nanowire induced by a covered insulator

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Bandstructures of unstrained and strained silicon nanowire

Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Suppressed thermal transport in silicon nanoribbons by inhomogeneous strain

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires