Abstract:Recently, ultralarge (>10%) strain with fully reversible elastic deformation has been experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)]. With this breakthrough, here in this work, based on the first principles calculation, the structural and electric properties of silicon under ultralarge strain are comparatively investigated. Unlike previous theoretical/simulation investigations on silicon nanowires with only a few nanometers, bulk silicon models are employed here to provide more realistic and comparable results to our experimentally tested samples (∼100 nm diameter). Strong anisotropic effects are induced by loading strain along all different orientations. Simultaneously, the band structures evolution demonstrates electronic anisotropy with the loading strain on three orientations. Silicon keeps an indirect bandgap under increased strain along the ⟨100⟩ orientation while transforming to a direct bandgap with strain along ⟨110⟩ and ⟨111⟩ orientations. Furthermore, ultralarge strain on these two orientations would diminish the bandgap and result into metallization. These results provide insights into understanding “elastic strain engineering” of silicon nanowire applications and demonstrate the possibility of tuning the electronic and optical properties through pure mechanical straining of functional materials.

Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires

Valence band variation in Si (110) nanowire induced by a covered insulator

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Strain Impacts on Electron Mobility in Silicon Nanowires

Bandstructures of unstrained and strained silicon nanowire

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Temperature-dependent Raman Scattering of Silicon Nanowires.

Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets