Abstract:Recently, ultralarge (>10%) strain with fully reversible elastic deformation has been experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)]. With this breakthrough, here in this work, based on the first principles calculation, the structural and electric properties of silicon under ultralarge strain are comparatively investigated. Unlike previous theoretical/simulation investigations on silicon nanowires with only a few nanometers, bulk silicon models are employed here to provide more realistic and comparable results to our experimentally tested samples (∼100 nm diameter). Strong anisotropic effects are induced by loading strain along all different orientations. Simultaneously, the band structures evolution demonstrates electronic anisotropy with the loading strain on three orientations. Silicon keeps an indirect bandgap under increased strain along the ⟨100⟩ orientation while transforming to a direct bandgap with strain along ⟨110⟩ and ⟨111⟩ orientations. Furthermore, ultralarge strain on these two orientations would diminish the bandgap and result into metallization. These results provide insights into understanding “elastic strain engineering” of silicon nanowire applications and demonstrate the possibility of tuning the electronic and optical properties through pure mechanical straining of functional materials.

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Valence band variation in Si (110) nanowire induced by a covered insulator

Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO 2 dielectric

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires

Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets

Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Strain Impacts on Electron Mobility in Silicon Nanowires

The Effects of Strain and Surface Roughness Scattering on the Quasi-Ballistic Characteristics of A Ge Nanowire P-Channel Field-Effect Transistor

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

Strain Evolution in SiGe Nanosheet Transistor Process Flow

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors