Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

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Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO 2 dielectric

Radial boundary forces-modulated valence band structure of Ge (110) nanowire

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

The Effects of Strain and Surface Roughness Scattering on the Quasi-Ballistic Characteristics of A Ge Nanowire P-Channel Field-Effect Transistor

Self-Induced Ge-Doped HfO 2 Applied to Ge Stacked Nanowires Ferroelectric Gate-all-Around Field-Effect Transistor with Steep Subthreshold Slope Under O 3 Treatment with GeO 2 as Interfacial Layer

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Valence band variation in Si (110) nanowire induced by a covered insulator

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

A Study of Metal Gates on HfO2 Using Si Nanowire Field Effect Transistors As Platform