Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Band structure calculations of Ge-Si core-shell nanowires

First-principles Study on Ge1−xSnx-Si Core-Shell Nanowire Transistors

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires

Strain effect analysis on the electrical conductivity of Si/Si 1-xGex nanocomposite thin films

GaAs-GaP core-shell nanowire transistors: A computational study

The Effects of Strain and Surface Roughness Scattering on the Quasi-Ballistic Characteristics of A Ge Nanowire P-Channel Field-Effect Transistor

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

Valence band variation in Si (110) nanowire induced by a covered insulator

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Strain engineering in Ge/GeSn core/shell nanowires

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors