Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

Ivan Marri,Stefano Ossicini,Michele Amato,Simone Grillo,Olivia Pulci

DOI: https://doi.org/10.48550/arXiv.2206.11058

2022-06-22

Abstract:The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theory. Effects induced by quantum confinement and strain on the near-band-edge states localization, as well as the band-offset properties between Si and Ge regions, are investigated in detail. On the one hand, we prove that Si(core)/Ge(shell) nanocrystals always show a type II band-offset alignment, with the HOMO mainly localized on the Ge shell region and the LUMO mainly localized on the Si core region. On the other hand, our results point out that a type II offset cannot be observed in small (diameter less than 3 nm) Ge(core)/Si(shell) nanocrystals. In these systems, quantum confinement and strain drive the near-band-edge states to be mainly localized on Ge atoms inducing a type I alignment. In larger Ge(core)/Si(shell) nanocrystals, instead, the formation of a type II offset can be engineered by playing with both core and shell thickness. The conditions that favor the transition from a type I to a type II alignment for Ge(core)/Si(shell) nanocrystals are discussed in detail.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of the quantum confinement effect and the strain effect on the transition of the type - I to type - II band - edge characteristics in Ge/Si core - shell nanocrystals. Specifically:

1. **Research Background**: The electronic, transport, and optical properties of Si (silicon) and Ge (germanium) nanomaterials have attracted much attention due to their potential applications in optoelectronics and photovoltaics. Si/Ge heterostructures offer more possibilities for tuning these properties, for example, by changing the Si and Ge atomic concentrations and their spatial distributions, modifying the geometry of the Si/Ge interface, and regulating the strain and the quantum confinement effect (QCE).

2. **Core Problems**:
- **Band - Offset Characteristics**: Study the band - offset characteristics in Si/Ge and Ge/Si core - shell nanocrystals (CSNCs), especially the localization of near - band - edge states and the band - offset characteristics between the Si and Ge regions.
- **Type - I and Type - II Heterostructures**: Explore whether type - II band - offset can be formed or type - I band - offset is maintained in Ge(core)/Si(shell) nanocrystals of different sizes. For Ge(core)/Si(shell) nanocrystals with a small diameter (less than 3 nm), how do the quantum confinement effect and the strain effect affect their band - offset characteristics?
- **Transition Conditions**: Clarify the conditions for the transition from type - I to type - II band - offset, especially in larger Ge(core)/Si(shell) nanocrystals, how to achieve this transition by adjusting the core and shell thicknesses.

3. **Research Methods**:
- Density functional theory (DFT) was used to study hydrogenated, spherical Si/Ge and Ge/Si core - shell nanocrystals with diameters ranging from 1.8 to 4.0 nm.
- The band - offset characteristics were determined by analyzing the localization of Kohn - Sham HOMO and LUMO states.
- Two different methods were used for the research: one was to consider the entire CSNC without simplification; the other was to analyze the core and shell separately to better understand the roles of the quantum confinement effect and the strain.

4. **Key Findings**:
- Si(core)/Ge(shell) nanocrystals always exhibit type - II band - offset, with HOMO mainly localized in the Ge shell region and LUMO mainly localized in the Si core region.
- For small - diameter Ge(core)/Si(shell) nanocrystals less than 3 nm, due to the quantum confinement effect and the strain effect, the near - band - edge states are mainly localized on Ge atoms, resulting in type - I band - offset.
- In larger - diameter Ge(core)/Si(shell) nanocrystals, type - II band - offset can be achieved by adjusting the core and shell thicknesses.

Through these studies, the paper aims to reveal the influence of the quantum confinement effect and the strain effect on the band - offset characteristics and provide theoretical guidance for designing Si/Ge core - shell nanocrystals with specific electronic and optical properties.