Abstract:We calculate the electronic structure of germanium-tin (Ge$_{1-x}$Sn$_{x}$) binary alloys for $0 \leq x \leq 1$ using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a function of Sn composition $x$ are identified, and the impact of epitaxial strain is included by constraining supercell lattice constants perpendicular to the [001] growth direction to the lattice constants of Ge, zinc telluride (ZnTe), or cadmium telluride (CdTe) substrates. It is found that application of 1% tensile strain reduces the Sn composition required to bring the (positive) direct band gap to zero by approximately 5% compared to a relaxed Ge$_{1-x}$Sn$_{x}$ alloy having the same gap at $\Gamma$. On the other hand, compressive strain has comparatively less impact on the alloy band gap at $\Gamma$. Using DFT calculated alloy lattice and elastic constants, the critical thickness for Ge$_{1-x}$Sn$_{x}$ thin films as a function of $x$ and substrate lattice constant is estimated, and validated against supercell DFT calculations. The analysis correctly predicts the Sn composition range at which it becomes energetically favourable for Ge$_{1-x}$Sn$_{x}$/Ge to become amorphous. The influence of stoichiometry and strain is examined in relation to reducing the magnitude of the inverted (``negative'') $\Gamma_{7}^{-}$-$\Gamma_{8}^{+}$ band gap, which is characteristic of semimetallic alloy electronic structure. Based on our findings, strategies for engineering the semimetal-to-semiconductor transition via strain and quantum confinement in Ge$_{1-x}$Sn$_{x}$ nanostructures are proposed.

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

Local Lattice Distortion of Ge-Dilute Ge-Si Alloy: Multiple-Scattering Exafs Study

Impact of stoichiometry and strain on Ge$_{1-x}$Sn$_{x}$ alloys from first principles calculations

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

First principles molecular dynamics study of amorphous Si\sub{1-x}Ge\sub{x}:H alloys

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Local Lattice Distortion of Ge Impurity in Si (001): Multiple-Scattering Exafs Study

Strain effects on electronic structure and optics of al-Doped monolayer GaS

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)

Raman Spectra of Relaxation and Thermal Stress in High Ge Content SiGe alloy

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice