Ming Yu,C. S. Jayanthi,David A. Drabold,S. Y. Wu
Abstract:In this work, we address issues pertinent to the understanding of the structural and electronic properties of Si_{1-x} Ge_{x}alloys, namely, (i) how does the lattice constant mismatch between bulk Si and bulk Ge manifests itself in the alloy system? and (ii) what are the relevant strain release mechanisms? To provide answers to these questions, we have carried out an in-depth study of the changes in the local geometric and electronic structures arising from the strain relaxation in Si_{1-x} Ge_{x} alloys using an ab initio molecular dynamics scheme. The optimized lattice constant, while exhibiting a general trend of linear dependence on the composition (Vegard's law), shows a negative deviation from Vegard's law in the vicinity of x=0.5. We delineate the mechanisms responsible for each one of the above features. We show that the radial-strain relaxation through bond stretching is responsible for the overall trend of linear dependence of the lattice constant on the composition. On the other hand, the negative deviation from Vegard's law is shown to arise from the angular-strain relaxation.
What problem does this paper attempt to address?
This paper attempts to solve two key problems in Si\(_{1 - x}\)Ge\(_x\) alloys:
1. **Lattice constant mismatch problem**: When Si and Ge are mixed in different proportions to form an alloy, since there is about a 4% difference in lattice constants between pure Si and pure Ge bulk materials, how does this difference manifest in the alloy system?
2. **Strain release mechanism**: How is the strain in the alloy released? Specifically, what changes occur in the local geometric and electronic structures during the strain release process?
To answer these questions, the author conducted in - depth research, mainly through the following methods:
- **Optimizing lattice constants**: Using the ab initio molecular dynamics scheme, for different composition ratios \(x\), the optimized lattice constants were calculated by fully relaxing the system and minimizing the total energy.
- **Analyzing local geometric and electronic structures**: The changes in local geometric and electronic structures during the strain release process were studied, especially the changes in parameters such as bond lengths, bond angles, and coordination numbers.
### Main findings
1. **Relationship between lattice constants and Vegard's law**:
- The change in lattice constants with the composition ratio \(x\) generally shows a linear dependence, which is in line with Vegard's law.
- Near \(x\approx0.5\), the lattice constants show a negative deviation from Vegard's law. This phenomenon is the result of the combined action of radial strain (through bond elongation) and angular strain (through bond - angle changes).
2. **Strain release mechanism**:
- **Radial strain**: It is mainly responsible for the linear dependence of the overall trend. It adapts to the change in lattice constants through bond elongation.
- **Angular strain**: Near \(x\approx0.5\), the relaxation of angular strain leads to a negative deviation from Vegard's law. Specifically, the bond angles deviate from the tetrahedral angle, and the magnitudes and directions of these deviations determine the degree of negative deviation.
3. **Local structure changes**:
- The change in bond length is weak, indicating that Si - Si, Ge - Ge, and Si - Ge bonds in the alloy try to maintain their respective equilibrium distances as much as possible.
- The coordination number analysis shows that Si and Ge atoms are randomly distributed in the alloy, indicating that they are completely miscible in the alloy.
4. **Electronic structure changes**:
- Local electronic structure analysis shows that the charge transfer between Si and Ge mainly occurs between impurity atoms and their nearest - neighbor atoms. For example, in the Si - rich region, each Si atom will transfer about 0.017 electrons to Ge atoms; in the Ge - rich region, each Ge atom will obtain about 0.016 electrons from Si atoms.
- The average bond charge order is \(\overline{q}_{\text{bond}}(\text{Ge - Ge})<\overline{q}_{\text{bond}}(\text{Si - Ge})<\overline{q}_{\text{bond}}(\text{Si - Si})\), which provides an electronic basis for the bond length order \(b_{\text{Ge - Ge}}>b_{\text{Si - Ge}}>b_{\text{Si - Si}}\).
Through these studies, the author has a comprehensive understanding of the strain release mechanism in Si\(_{1 - x}\)Ge\(_x\) alloys and its influence on local structures and electronic properties.