Abstract:The local structure of dilute Ge impurity in Si thin film has been studied by grazing incidence fluorescence XAFS in the temperature region of 20 ∼ 300 K. Multiple-scattering XAFS (MS-XAFS) data analysis is used to fit the local structures around Ge atoms from the first to third coordination shells for the Ge0.006Si0.994 thin film. The results indicate that the bond length RGe–Si of the first, second and third Ge-Si shell is 2.38, 3.83 and 4.49 Å for the Ge0.006Si0.994 thin film, respectively. The RGe–Si of the first Ge–Si shell in the Ge0.006Si0.994 thin film is 0.03 larger than that of the first Si–Si shell in Si crystal, and the RGe–Si of the second and third Ge–Si shells in the Ge0.006Si0.994 thin film are almost equal to those of the corresponding Si–Si shells in Si crystal. These results imply that the local lattice deformation exists in the first nearest neighbor around Ge atoms and the lattice distortion relieves in the second and third Ge–Si shells for the Ge0.006Si0.994 thin film. Furthermore, the results show that the Debye-Waller factor σ12 of the first Ge–Si shell of the Ge0.006Si0.994 thin film increases slightly from 0.0018 to 0.0020 Å2 in the temperature region between 20 and 100 K, and rises strongly to 0.0040 Å2 at 300 K. The bond angles θGe–Si–Si at all temperatures are about 108.1°, which is close to the value of tetragonal network of 109.47°. The bond angle variation ΔθGe–Si–Si is about ±3.4°, ±3.5° and ±5.0° at the temperatures of 20, 100 and 300 K, respectively, indicating a weak tetragonal distortion around the Ge atoms in the Ge0.006Si0.994 thin film.

Local Lattice Distortion of Ge-Dilute Ge-Si Alloy: Multiple-Scattering Exafs Study

Local Lattice Distortion of Ge Impurity in Si (001): Multiple-Scattering Exafs Study

Temperature Dependence of Local Structure of Ge Impurity in Si 001 Thin Film Probed by MultipleScattering XAFS

Local Structures of Isovalent and Heterovalent Dilute Impurities in Si Crystal Probed by Fluorescence X-Ray Absorption Fine Structure

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Local Structures of (ge4/si4)5 Monolayer Strained-Layer Supperlattice Probed by Fluorescence XAFS

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

Thermophysical Properties and Atomic Structure of Liquid Si-Ge Alloys

Thermal Conductivity of Epitaxial Layers of Dilute SiGe Alloys

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Strains in Si Substrate Induced by Formation of Ge Islands

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction