Abstract:Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Optical properties of Ge/Si quantum dot superlattices

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

GeSi Quantum Dots Studied by Grazing Incidence Small Angle X-ray Scattering

Local Structures of (ge4/si4)5 Monolayer Strained-Layer Supperlattice Probed by Fluorescence XAFS

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Short-range Order and Atomic Diffusion in Liquid Ge and Si20Ge80 Investigated by Neutron Scattering and X-Ray Diffraction

The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

Interface Interdiffusion Intensified by Formation of Quantum Dots

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)