Abstract:We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2-4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs conformed to Stranski-Krastanow mode, but the typical thickness of the wetting layer was nearly three times higher than those derived from conventional technologies such as molecular beam epitaxy, chemical vapor deposition, solid phase epitaxy and so on. Meanwhile, the shape evolution of QDs was very different from existing reports. The specific internal causes of these novel phenomena were analyzed and confirmed and reported in this paper. In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have the most excellent morphology, structure, and optoelectronic performance. Our work lays a foundation for further exploration of the controllable growth of QDs at high deposition rates, which is a new way to realize the industrialization of QDs used for future devices.

GeSi Quantum Dots Studied by Grazing Incidence Small Angle X-ray Scattering

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical properties of Ge/Si quantum dot superlattices

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Interface Interdiffusion Intensified by Formation of Quantum Dots

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Photocurrent Study of Ge/Si Double Quantum Dots

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Development Of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface