Abstract:The local structure of Ge quantum dots (QD's) self-assembled on Si(100) has been probed by extended x-ray absorption fine-structure and x-ray absorption near-edge structure spectroscopies. We found that in the uncapped QD's, Ge is partially oxidized (similar to35%) while the other part (similar to40%) alloys with Si leaving only similar to25% as a pure Ge phase. In the Si-capped dots the structure strongly depends on the growth temperature. For QD's grown at a rather high temperature of 745 degreesC, Ge is strongly intermixed with silicon forming a Ge-Si solid solution. The fraction of Ge atoms existing as a pure Ge phase does not exceed 10%. In the QD's grown at a lower temperature (510-550 degreesC), on the other hand, the Ge-rich phase clearly exists. The Ge-Ge bond length in the uncapped dots is close to the bulk value of Ge, indicating elastic relaxation of the misfit strain. The Ge-Si bond length in the capped QD's grown at 745 degreesC approaches the bulk value of Si, revealing compressive strain in the buried Si/Ge dot structures. In QD's grown at lower temperatures the Ge-Ge bond length equals 2.42 Angstrom indicating a small compressive strain. We also found that the structural disorder is higher in the uncapped samples.

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Optical properties of Ge/Si quantum dot superlattices

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

The Stability of Faceted SiGe Quantum Dots Capped with a Thin Si Layer

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Interface Interdiffusion Intensified by Formation of Quantum Dots

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots