Abstract:The local structure of dilute Ge impurity in Si thin film has been studied by grazing incidence fluorescence XAFS in the temperature region of 20 ∼ 300 K. Multiple-scattering XAFS (MS-XAFS) data analysis is used to fit the local structures around Ge atoms from the first to third coordination shells for the Ge0.006Si0.994 thin film. The results indicate that the bond length RGe–Si of the first, second and third Ge-Si shell is 2.38, 3.83 and 4.49 Å for the Ge0.006Si0.994 thin film, respectively. The RGe–Si of the first Ge–Si shell in the Ge0.006Si0.994 thin film is 0.03 larger than that of the first Si–Si shell in Si crystal, and the RGe–Si of the second and third Ge–Si shells in the Ge0.006Si0.994 thin film are almost equal to those of the corresponding Si–Si shells in Si crystal. These results imply that the local lattice deformation exists in the first nearest neighbor around Ge atoms and the lattice distortion relieves in the second and third Ge–Si shells for the Ge0.006Si0.994 thin film. Furthermore, the results show that the Debye-Waller factor σ12 of the first Ge–Si shell of the Ge0.006Si0.994 thin film increases slightly from 0.0018 to 0.0020 Å2 in the temperature region between 20 and 100 K, and rises strongly to 0.0040 Å2 at 300 K. The bond angles θGe–Si–Si at all temperatures are about 108.1°, which is close to the value of tetragonal network of 109.47°. The bond angle variation ΔθGe–Si–Si is about ±3.4°, ±3.5° and ±5.0° at the temperatures of 20, 100 and 300 K, respectively, indicating a weak tetragonal distortion around the Ge atoms in the Ge0.006Si0.994 thin film.

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Temperature Dependence of Local Structure of Ge Impurity in Si 001 Thin Film Probed by MultipleScattering XAFS

Study of Si and Ge growth on Si(100) surface

Local Structures of (ge4/si4)5 Monolayer Strained-Layer Supperlattice Probed by Fluorescence XAFS

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Electronic structure of the Ge/Si(105) hetero-interface

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Structural Evolution of Ge-rich Si1−xGex Films Deposited by Jet-Icpcvd

Atomic Structures Of The Ge/Si(113)-(2x2) Surface