Abstract:Fully-coherent Si0.7Ge0.3 layers were deposited on Si(001) by gas-source molecular beam epitaxy (GS-MBE) from Ge2H6/Si2H6 mixtures in order to probe the effect of steady-state hydrogen coverages θH on surface morphological evolution during the growth of compressively strained films. The layers are grown as a function of thickness t at temperatures, Ts=450–550 °C, for which strain-induced roughening is observed during solid-source MBE (SS-MBE) and deposition from hyperthermal beams. With GS-MBE, we obtain three-dimensional (3D) strain-induced growth mounds in samples deposited at Ts=550 °C for which θH is small, 0.11 monolayer (ML). However, mound formation is dramatically suppressed at 500 °C (θH=0.26 ML) and completely eliminated at 450 °C (θH=0.52 ML). We attribute these large differences in surface morphological evolution primarily to θH(Ts)-induced effects on film growth rates R, adatom diffusion rates Ds, and ascending step-crossing probabilities. GS-MBE Si0.7Ge0.3(001) growth at 450 °C remains two dimensional, with a surface width 〈w〉<0.15 nm, at all film thicknesses t=11–80 nm, since both R and the rate of mass transport across ascending steps are low. Raising Ts to 500 °C increases R faster than Ds leading to shorter mean surface diffusion lengths and the formation of extremely shallow, rounded growth mounds for which 〈w〉 remains essentially constant at ≃0.2 nm while the in-plane coherence length 〈d〉 increases from ≃70 nm at t=14 nm to 162 nm with t=75 nm. The low ascending step crossing probability at 500 °C results in mounds that spread laterally, rather than vertically, due to preferential attachment at the mound edges. At Ts=550 °C, the ascending step crossing probability increases due to both higher thermal activation and lower hydrogen coverages. 〈w〉(t) increases by more than a factor of 10, from 0.13 nm at t=15 nm to 1.9 nm at t=105 nm, while the in-plane coherence length 〈d〉 remains constant at ≃85 nm. This leads, under the strain driving force, to the formation of self-organized 3D {105}-faceted pyramids at 550 °C which are very similar to those observed during SS-MBE.

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Temperature Dependence of Local Structure of Ge Impurity in Si 001 Thin Film Probed by MultipleScattering XAFS

Study of Si and Ge growth on Si(100) surface

Hydrogen-Mediated Quenching of Strain-Induced Surface Roughening During Gas-Source Molecular Beam Epitaxy of Fully-Coherent Si0.7ge0.3 Layers on Si(001)

Morphology And Microstructure Of Tensile-Strained Sige(001) Thin Epitaxial Films

Local Structures of (ge4/si4)5 Monolayer Strained-Layer Supperlattice Probed by Fluorescence XAFS

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Structure analysis of SiCGe films grown on SiC

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Local Atomic Structure of GeSi Alloy Semiconductors

Electronic structure of the Ge/Si(105) hetero-interface

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Study of Ge0.96Si0.04 epilayers grown on Si (001) at high temperature

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Microstructures of Ge/Si Superlattices Growth at Low Temperature