Abstract:Firstly, both the rest atoms and the adatoms of Si(111)-7×7 surface are observed simultaneously by scanning tunneling microscopy (STM) when the sample bias voltages are kept less than -0.7V. The visibility of the rest atoms is rationalized by first-principle calculations and a very sharper tip can resolve them. Secondly, the behaviors of various Ge nanostructures fabricated on Si(111)-7 × 7, ranging from the initial adsorption sites of individual Ge atoms to the aggregation patterns of Ge nanoclusters, and then to 2D extended Ge islands, are comprehensively investigated by STM. The individual Ge atoms tend to substitute for Si adatoms at Si(111)-7 × 7 with the preference of corner adatoms in the faulted half unit when keeping substrate at 150°C. With increasing Ge coverage, individual Ge atoms and Ge nanoclusters coexist on the substrate. Subsequently, the density of Ge nanoclusters increase and cluster-distribution becomes gradually regular with the formation of final 2D extended hexagonal configuration. When keeping the substrate at 300°C, Ge islands consisting of more complicated reconstructions with intermixing Ge/Si components are present on the substrate. The detail structural characterizations and the bonding nature of the observed Ge nanostructures are enunciated by the first-principle calculations.

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Structural Stability of the Ge/Si(1 1 3)-2×2 Surface

Structural Stability and Anisotropic Stress of Ge/Si(113)-2*2 Surface

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Atomic Structure of the Ge(101) Surface

Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Atomic Structure of the Ge(15 3 23) Surface

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Surface Structure of the (3x1) and (3x2) Reconstructions of Ge(113)

Electronic structure of the Ge/Si(105) hetero-interface

Atomic Structure of the Ge(313) Surface

Atomic Structure Of The Si(112) 7x1-In Surface

Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-(7 X 7).

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Stm Observation and First-Principles Determination of Ge Nanoscale Structures on Si(111)

Atomic Structure of High-Index Ge Surfaces Consisting of Periodic Nanoscale Facets

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Chemisorption of Ge on Si ( 100 ) -2 × 1 Surfaces: A First-principles Study

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots