Abstract:We present scanning tunneling microscopy observations of the reaction of cobalt with Si(111)-(7×7). For deposition at 320 °C (reactive epitaxy), flat-topped monolayer islands of triangular shape with vertices along 〈1̄1̄2〉Si nucleate on the faulted side of the 7×7 structure then grow in size attaining edge lengths that are quantized to integer multiples of the 7×7 unit cell. A 2×2 reconstruction with large corrugation occurs on some of the islands, and is believed to be an ordered array of silicon adatoms. The shape and orientation of the islands appears to be determined by energetics, not growth kinetics. They coexist with the 7×7 structure, implying that metal atoms readily diffuse through the silicon matrix before attaching to an existing island. From the areal density of islands we estimate an activation energy for ‘‘surface diffusion’’ of 0.8 eV, and argue that the process involves metal atom transport through near-surface silicon interstitials. At lower temperatures, no ordered silicide forms, while at higher temperatures, multilayer islands form with a predominant layer spacing of 3.1 Å suggesting that they are (111)CoSi2. For postdeposition annealing at 600 °C (solid phase epitaxy), large, multilayer islands of CoSi2 form, in coexistence with a √7 submonolayer phase. General aspects of the nucleation, growth, and coarsening in this reactive, epitaxial system are discussed.

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Atomic Structure of the Domain Walls of the Discommensurate Phases in Ge(111)/Ga

Phase Coexistence and Morphology at the Si(110) Surface Phase Transition

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Intertwined Electronic and Structural Phase Transitions in the In/Si(111) Interface

Scanning Tunneling Microscopy Studies of Nucleation and Growth in a Reactive, Epitaxial System: Co/Si(111)

Real-space Observation of Nanoscale Inhomogeneities and Fluctuations in a Phase Transition of a Surface Quasi-One-dimensional System: In/Si(111).

Atomic structure of the Ge(112)-(4 x 1) - In reconstruction

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Atomic Structure Of The Si(112) 7x1-In Surface

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Study of Si and Ge growth on Si(100) surface

Mechanism of the Band Gap Opening Across the Order-Disorder Transition of Si(111)(4x1)-In

Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces

ATOMIC STRUCTURE OF THE Ge(112)-(4 × 1)-In RECONSTRUCTION

Co-induced nano-structures on Si(111) surface