Abstract:The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der Waals (vdW) corrected hybrid density functional calculation predicts that the low-temperature 8x2 structure whose building blocks are indium hexagons is energetically favored over the room-temperature 4x1 structure. We show that the correction of self-interaction error and the inclusion of vdW interactions play crucial roles in describing the covalent bonding, band-gap opening, and energetics of hexagon structures. The results manifest that the formation of hexagons occurs by a simple energy lowering due to the lattice distortion, not by a charge density wave formation arising from Fermi surface nesting.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is what the specific driving force is for the phase transition of indium nanowires on the silicon (111) surface. For a long time, there has been a controversy in the academic community as to whether this phase transition is driven by Peierls instability (that is, the formation of charge - density waves caused by Fermi - surface nesting) or by the energy reduction due to periodic lattice distortion.
### Core issues of the paper
Specifically, this paper mainly explores the following points:
1. **Phase - transition mechanism**: Determine the real reason for the indium nanowires to transform from the 4×1 structure to the 8×2 structure at low temperatures.
2. **Energy stability**: Evaluate the energy stability of different structures (4×1, 4×2 and 8×2) and explain why some structures are more stable at low temperatures.
3. **Verification of theoretical models**: By correcting the self - interaction error (SIE) and introducing van der Waals (vdW) interactions, verify whether the hexagonal model can better describe the low - temperature phase characteristics of indium nanowires.
### Research background
Indium nanowires exhibit rich physical phenomena on the silicon (111) surface, such as charge - density - wave formation, non - Fermi - liquid behavior, etc. In particular, at low temperatures (about 120 K), these quasi - one - dimensional systems will undergo a reversible phase transition, changing from the 4×1 structure at room temperature to the 8×2 structure at low temperatures, accompanied by a metal - insulator transition. However, the specific driving force has been unclear.
### Main conclusions
Through the use of corrected hybrid density - functional - theory (DFT) calculations, especially by introducing vdW interactions, the authors find that:
- **Formation of the hexagonal structure**: The hexagonal structure in the 8×2 structure at low temperatures is due to simple energy reduction, rather than the formation of charge - density waves caused by Peierls instability.
- **Importance of vdW interactions**: vdW interactions play a crucial role in stabilizing the hexagonal structure.
- **Correction of self - interaction error**: Correcting SIE can better describe covalent bonding, band - gap opening and the energetics of the hexagonal structure.
In summary, through detailed theoretical calculations, this paper clarifies that the phase transition of indium nanowires on the silicon (111) surface is driven by simple energy reduction, rather than by Peierls instability.