Mechanism of the Band Gap Opening Across the Order-Disorder Transition of Si(111)(4x1)-In

C. Gonzalez,Jiandong Guo,J. Ortega,F. Flores,H. H. Weitering
DOI: https://doi.org/10.1103/physrevlett.102.115501
IF: 8.6
2009-01-01
Physical Review Letters
Abstract:The ground state properties of indium atom chains on the Si(111) 8 x 2-In surface and the nature of their insulator-metal (IM) transition near 120 K are under intense dispute. We compare experimental scanning tunneling microscopy (STM) images of the low temperature (LT) 8 x 2 phase with STM image calculations from Density Functional Theory (DFT). Our LT studies clearly indicate the existence of a frozen shear distortion between neighboring atom chains, resulting in the formation of indium hexagons. Tunneling spectra furthermore indicate that the IM transition coincides with the collapse of a approximately 0.3 eV surface-state band gap at the Gamma point of the 4 x 2 Brillouin zone. This implies that the IM transition is driven by a shear phonon, not by Fermi surface nesting.
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