Abstract:Herein, we report the reversible structural transition of single-layer VSe2 grown on Au(111) through alternating thermal annealing and Se replenishment. Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxial growth of high-quality VSe2 on Au(111) with the octahedral (1T) structure and the Se-vacancy-induced transformation of VSe2 from the metallic moiré (1T) phase to the semiconducting (2H) phase. With convincing agreement between the experimental results and DFT calculations, the nanostructure near the grain boundary in the defective intermediate phase is confirmed, as well as the reaction pathway with Se gradually depleting at elevated temperatures. Importantly, it is revealed that the density of the linear Se defects plays a crucial role in the formation of the 2H domain phase due to the increment of the in-plane lattice parameter after Se desorption and the better thermal stability of the 2H phase compared to the 1T phase. The proper control of the density of Se atoms in the topmost Se layer of VSe2 could feasibly manipulate the ratio between the 1T phase and the 2H phase in the steak-shaped domain, which is regarded as a good platform for 2D homojunctions in nanoelectronics.

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The density and disorder tuned superconductor-metal transition in two dimensions

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Quantum Phase Transitions in Interfacing Two Gapped Systems of Ordinary Fermions Driven by External Strain and Atomic Adsorption

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Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Infrared Nanoimaging of the Metal-Insulator Transition in the Charge-Density-wave Van Der Waals Material 1T−tas2

Quantum Phase Transitions in the p-SiGe system

Bond competition and phase evolution on the IrTe₂ surface

Strong Localization Across the Metal-Insulator Transition at the Ag/Si(111)-(√3 × √3)R30° Interface

Structural phase transition and electronic structure evolution in Ir 1− x Pt x Te 2 studied by scanning tunneling microscopy

Structural phase transition in monolayer gold(I) telluride: From a room-temperature topologicalinsulator to an auxetic semiconductor

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Phase transition of ultrathin Bi2Se3 film sandwiched between ferromagnetic insulators

First-principles study of phase transition in the α-In2Se3/metal heterostructures