Significance of Ischemic Heart Disease in Patients With Heart Failure and Preserved, Midrange, and Reduced Ejection Fraction: A Nationwide Cohort Study

O. Vedin,C. Lam,A. Koh,L. Benson,T. Teng,W. Tay,O. Braun,G. Savarese,U. Dahlström,L. Lund

DOI: https://doi.org/10.1161/CIRCHEARTFAILURE.117.003875

2017-06-01

Abstract:Background— The pathogenic role of ischemic heart disease (IHD) in heart failure (HF) with reduced ejection fraction (HFrEF; EF <40%) is well established, but its pathogenic and prognostic significance in HF with midrange (HFmrEF; EF 40%–50%) and preserved EF (HFpEF; EF ≥50%) has been much less explored. Methods and Results— We evaluated 42 987 patients from the Swedish Heart Failure Registry with respect to baseline IHD, outcomes (IHD, HF, cardiovascular events, and all-cause death), and EF change during a median follow-up of 2.2 years. Overall, 23% had HFpEF (52% IHD), 21% had HFmrEF (61% IHD), and 55% had HFrEF (60% IHD). After multivariable adjustment, associations with baseline IHD were similar for HFmrEF and HFrEF and lower in HFpEF (risk ratio, 0.91 [0.89–0.93] versus HFmrEF and risk ratio, 0.90 [0.88–0.92] versus HFrEF). The adjusted risk of IHD events was similar for HFmrEF versus HFrEF and lower in HFpEF (hazard ratio, 0.89 [0.84–0.95] versus HFmrEF and hazard ratio, 0.84 [0.80–0.90] versus HFrEF). After adjustment, prevalent IHD was associated with increased risk of IHD events and all other outcomes in all EF categories except all-cause mortality in HFpEF. Those with IHD, particularly new IHD events, were also more likely to change to a lower EF category and less likely to change to a higher EF category over time. Conclusions— HFmrEF resembled HFrEF rather than HFpEF with regard to both a higher prevalence of IHD and a greater risk of new IHD events. Established IHD was an important prognostic factor across all HF types.

What problem does this paper attempt to address?

This paper aims to explore and explain various quantum phase - transition phenomena observed in strained p - SiGe systems. Specifically, the author attempts to solve the following key problems:

1. **Quantum Hall effect phase transition**: Study the characteristics of the integer quantum Hall effect (IQHE) phase transition and compare it with other types of phase transitions. Through experimental data and theoretical models, verify whether these phase transitions have similar quantum critical behaviors.

2. **Hall insulator phase transition**: Analyze the quantum Hall insulator phase transition from filling factor ν = 2 to ν = 1 and explore its relationship with the standard integer quantum Hall effect phase transition.

3. **Transition to re - enter the insulating phase**: Study the transition to re - enter the insulating phase that occurs near the filling factor ν≈3/2. Does this phase transition have the same characteristics as the quantum Hall effect phase transition, especially under low - temperature conditions?

4. **B = 0 metal - insulator phase transition**: Explore the metal - insulator phase transition (MIT) that occurs in zero magnetic field and try to understand the connection between this phase transition and the aforementioned phase transitions. In particular, the author points out that an additional impurity scattering term needs to be introduced to fully explain the experimental data.

### Main findings

- **Quantum critical phase transition**: The paper shows that the integer quantum Hall effect phase transition, the Hall insulator phase transition, and the transition to re - enter the insulating phase all exhibit similar quantum critical behaviors. Their resistivity varies exponentially with temperature and has a temperature exponent close to 3/7 at low temperatures.

- **B = 0 metal - insulator phase transition**: Although the B = 0 metal - insulator phase transition also shows many quantum critical features, it seems to involve a double - scattering mechanism, including an additional impurity resistivity term. This makes the behavior in the metallic phase more complex, but it still exhibits weak localization features at low temperatures.

### Formula summary

1. **Conductivity formula for integer quantum Hall effect phase transition**:
\[
\sigma_{xx} = \frac{2\sigma_{pk}s}{1 + s^2}, \quad \sigma_{xy} = n_L - \frac{s^2}{1 + s^2}
\]
where \( s = \exp[(\nu_c - \nu)(T_0/T)^\kappa] \) and \(\kappa\) is close to the theoretically expected value of 3/7.

2. **Resistivity formula for B = 0 metal - insulator phase transition**:
\[
\rho(T) = \rho_0 + \rho_1 \exp\left[-\left(\frac{T_0}{T}\right)^n\right]
\]
In some cases, the data can be better fitted in the following form:
\[
\rho(T) = \rho_0 + \rho_c \exp\left[-A\left(\frac{\delta p}{T}\right)^\kappa\right]
\]
where \(\delta p=(p - p_c)/p_c\), \(\rho_c\) is approximately \(h/e^2\), and \(\kappa\) is approximately 0.5.

### Conclusion

Through the study of multiple quantum phase transitions in strained p - SiGe systems, the paper reveals the close connections between these phase transitions and proposes a unified understanding framework. In particular, the author emphasizes the universality of quantum critical behavior in different phase transitions and points out the uniqueness of the B = 0 metal - insulator phase transition.