Inevitable First Order Phase Transitions in 3D Quantum Hall Systems

Kaiyuan Gu,Kai Torrens,Biao Lian

2024-06-18

Abstract:Recent experiments suggest that low carrier density three-dimensional (3D) metals ZrTe$_5$ and HfTe$_5$ exhibit the 3D quantum Hall (QH) effect with Hall resistivity plateaus and a metal-insulator transition in strong magnetic fields. The conventional 3D QH theory requires a fixed period charge density wave (CDW), which is however not observed experimentally. We investigate alternative non-CDW mechanisms by considering a 3D metal in strong magnetic fields with electrons coupled to a boson (e.g., phonon) field. We show that the model exhibits inevitable first order phase transitions at jumps of the number of occupied Landau level bands, which do not involve CDW. These transitions may drive the system into a phase separation state with percolation transitions. We further show this can lead to Hall resistivity quasi-plateaus similar to that observed experimentally, and can provide a natural explanation for the metal-insulator transition.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

What problem does this paper attempt to address?

This paper discusses the inevitable first-order phase transition in three-dimensional quantum Hall systems. Existing theories propose that the three-dimensional quantum Hall effect requires a periodic charge density wave (CDW), but this phenomenon has not been observed in experiments. By considering a model of interaction between electrons and bosonic fields, the researchers found that even without a CDW, the system can undergo a first-order phase transition in a strong magnetic field, which occurs when the number of occupied Landau levels jumps. These phase transitions may lead to system separation and be accompanied by a percolation transition, resulting in a quasi-step-like Hall resistivity similar to what is observed in experiments.

In the case of low disorder, the model shows that when electrons interact with bosonic fields such as phonons, a first-order phase transition inevitably occurs without involving CDW. As disorder increases, these phase transitions may weaken or even disappear. This first-order phase transition may lead to the formation of a segregated phase in the system, explaining the observed Hall resistivity behavior similar to the Hall step and providing a natural explanation for the metal-insulator transition in a high magnetic field.

In experiments, quasi-quantized Hall resistivity steps have been observed in anisotropic semiconductors ZrTe5 and HfTe5 with low carrier density. Traditional CDW mechanisms cannot explain these data because they exhibit finite longitudinal resistance. The theoretical model proposed in the paper suggests a non-CDW mechanism, where phase separation and percolation transitions induced by the interaction between electrons and phonons during the magnetic field-dependent phase transition can explain these observations.

In summary, the paper aims to address the following questions: How to explain the observed Hall step phenomenon in three-dimensional quantum Hall systems and how to explain the metal-insulator transition without relying on charge density waves.