Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Yi-Fan Zhao,Ruoxi Zhang,Ling-Jie Zhou,Ruobing Mei,Zi-Jie Yan,Moses H. W. Chan,Chao-Xing Liu,Cui-Zu Chang

DOI: https://doi.org/10.1103/PhysRevLett.128.216801

2021-09-23

Abstract:The plateau-to-plateau transition in quantum Hall effect under high magnetic fields is a celebrated quantum phase transition between two topological states through either sweeping the magnetic field or tuning the carrier density. The recent realization of the quantum anomalous Hall (QAH) insulators with tunable Chern numbers introduces the channel degree of freedom to the dissipation-free chiral edge transport and makes the study of the quantum phase transition between two topological states under zero magnetic field possible. Here, we synthesized the magnetic topological insulator (TI)/TI penta-layer heterostructures with different Cr doping concentrations in the middle magnetic TI layers using molecular beam epitaxy (MBE). By performing transport measurements, we found a zero magnetic field quantum phase transition between the C = 1 and C = 2 QAH states. In tuning the transition, the Hall resistance monotonically decreases from h/e2 to h/2e2, concurrently, the longitudinal resistance exhibits a maximum at the critical point. Our results show that the ratio between the Hall resistance and the longitudinal resistance is greater than 1 at the critical point, which indicates that the original chiral edge channel from the C = 1 QAH state coexists with the dissipative bulk conduction channels. Subsequently, these bulk conduction channels appear to self-organize and form the second chiral edge channel in completing the plateau phase transition. Our study will motivate further investigations of this novel Chern number change-induced quantum phase transition and advance the development of the QAH chiral edge current-based electronic and spintronic devices.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the quantum phase transition between different Chern numbers in Quantum Anomalous Hall (QAH) insulators under zero - magnetic - field conditions. Specifically, by adjusting the chromium (Cr) doping concentration in the intermediate magnetic topological insulating layer, the researchers achieved a zero - magnetic - field quantum phase transition between quantum anomalous Hall insulators with Chern number \(C = 1\) and \(C = 2\). This process involves not only the evolution of edge states but also the self - organization of the bulk conducting channel to form new edge states, thus completing the transition from one Chern number to another.

The key questions in the paper include:
1. **What changes occur to the initial unidirectional edge states during the phase transition process?** The study found that during the phase transition process, the initial unidirectional edge states of the \(C = 1\) QAH insulator persist and coexist with the bulk conducting channel.
2. **How do the unidirectional edge states evolve to form the \(C = 2\) QAH insulator?** Research shows that as the chromium doping concentration increases, the bulk conducting channel gradually self - organizes to form a second unidirectional edge state, and finally completes the phase transition from \(C = 1\) to \(C = 2\).

These findings not only provide a new perspective for understanding topological phase transitions in the quantum anomalous Hall effect but also lay the foundation for the development of low - power - consumption electronic and spintronic devices based on unidirectional edge currents.