Abstract:A quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has a quantized Hall resistance of h/(Ce2) and vanishing longitudinal resistance under zero magnetic field (where h is the Planck constant, e is the elementary charge, and the Chern number C is an integer)1,2. The QAH effect has been realized in magnetic topological insulators3–9 and magic-angle twisted bilayer graphene10,11. However, the QAH effect at zero magnetic field has so far been realized only for C = 1. Here we realize a well quantized QAH effect with tunable Chern number (up to C = 5) in multilayer structures consisting of alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitaxy. The Chern number of these QAH insulators is determined by the number of undoped topological insulator layers in the multilayer structure. Moreover, we demonstrate that the Chern number of a given multilayer structure can be tuned by varying either the magnetic doping concentration in the magnetic topological insulator layers or the thickness of the interior magnetic topological insulator layer. We develop a theoretical model to explain our experimental observations and establish phase diagrams for QAH insulators with high, tunable Chern number. The realization of such insulators facilitates the application of dissipationless chiral edge currents in energy-efficient electronic devices, and opens up opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects. The number of edge channels in quantum anomalous Hall insulators is controlled by varying either the magnetic dopant concentration or the interior spacer layer thickness, yielding Chern numbers up to 5.

Tunning the number of chiral edge channels in a fixed quantum anomalous Hall system

Tuning the Number of Chiral Edge Channels in a Fixed Quantum Anomalous Hall System

Tuning the Chern number in quantum anomalous Hall insulators

Quantum Anomalous/valley Hall Effect and Tunable Quantum State in Hydrogenated Arsenene Decorated with a Transition Metal

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Quantum Anomalous Hall Effect With Tunable Chern Number In Magnetic Topological Insulator Film

Electrical switching of the edge current chirality in quantum anomalous Hall insulators

Quantum anomalous Hall effect with a high and tunable Chern number in monolayer NdN 2

Creation of chiral interface channels for quantized transport in magnetic topological insulator multilayer heterostructures

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

Tunable Chiral and Helical Edge State Transport in a Magnetic Topological Insulator Bilayer

Dirac fermion approach and its application to design high Chern numbers in magnetic topological insulator multilayers

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers

The Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-temperature 1T-PrN 2 Monolayer

Tunable Quantum Anomalous Hall Effect via Crystal Order in Spin-Splitting Antiferromagnets

Photoinduced High-Chern-Number Quantum Anomalous Hall Effect from Higher-Order Topological Insulators

Quantum Anomalous Hall Effects Controlled by Chiral Domain Walls

Scale-invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators Beyond the Two-Dimensional Limit.

Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy