Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets

Wenhao Liang,Jiaqi An,Zeyu Li,Yafei Ren,Zhenhua Qiao,Qian Niu

2024-04-20

Abstract:We propose to realize quantum anomalous Hall effect (QAHE) in two-dimensional antiferromagnetic topological insulators. We consider antiferromagnetic MnBi$_2$Te$_4$ as a concrete example. In contrast to the even-layer A-type antiferromagnetic MnBi$_2$Te$_4$ that has zero Chern number due to the combined parity-time ($\mathcal{PT}$) symmetry, the system can host a nonzero Chern number by breaking this symmetry. We show that by controlling the antiferromagnetic spin configuration, for example, down/up/up/down, to break $\mathcal{PT}$ symmetry, tetralayer antiferromagnetic MnBi$_2$Te$_4$ can realize QAHE with Chern number $\mathcal{C}=-1$. Such spin configuration can be stablized by pinning the spin orientations on top and bottom layers. Furthermore, we reveal that the edge states are layer-selective and primarily locate at the boundaries of the bottom and top layers. In addition, via tuning the on-site orbital energy which determines the inverted band gap, we find tunable Chern number from $\mathcal{C}=-1$ to $\mathcal{C}=2$ and then to $\mathcal{C}=-1$. Our work not only proposes a scheme to realize Chern number tunable QAHE in antiferromagnets without net spin magnetization, but also provide a platform for layer-selective dissipationless transport devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The paper aims to address the following issues:

1. **Realization of Quantum Anomalous Hall Effect (QAHE)**: The paper proposes a method to achieve the quantum anomalous hall effect in a two-dimensional antiferromagnetic topological insulator. Specifically, by controlling the antiferromagnetic spin configuration to break the parity-time (PT) symmetry, the system can have a non-zero Chern number.

2. **Regulation of Chern Number**: By adjusting the local orbital energy levels, the system's Chern number can be regulated from -1 to 2, and then back to -1. This method not only realizes a tunable Chern number QAHE but also provides a platform for layer-selective dissipationless transport devices.

3. **Layer-Selective Edge States**: The study found that the edge states are mainly distributed at the top and bottom layer boundaries, a phenomenon that can be used in the design of layer-selective dissipationless transport devices.

4. **Stability Analysis**: Although the proposed spin configuration is not as stable in energy as the inherent A-type antiferromagnetic configuration, a stable spin configuration can be achieved by introducing a magnetic pinning layer.

In summary, the paper proposes a new method to achieve a tunable Chern number quantum anomalous hall effect in compensated antiferromagnetic materials without net spin magnetization and demonstrates its potential application value.