Three-Dimensional Quantum Anomalous Hall Effect in Ferromagnetic Insulators

Y. J. Jin,R. Wang,B. W. Xia,B. B. Zheng,H. Xu
DOI: https://doi.org/10.1103/PhysRevB.98.081101
2018-07-19
Abstract:The quantum anomalous Hall effect (QAHE) hosts the dissipationless chiral edge states associated with the nonzero Chern number, providing potentially significant applications in future spintronics. The QAHE usually occurs in a two-dimensional (2D) system with time-reversal symmetry breaking. In this work, we propose that the QAHE can exist in three-dimensional (3D) ferromagnetic insulators. By imposing inversion symmetry, we develop the topological constraints dictating the appearance of 3D QAHE based on the parity analysis at the time-reversal invariant points in reciprocal space. Moreover, using first-principles calculations, we identify that 3D QAHE can be realized in a family of intrinsic ferromagnetic insulating oxides, including layered and non-layered compounds that share a centrosymmetric structure with space group $R\bar{3}m$ (No. 166). The Hall conductivity is quantized to be $-\frac{3e^2}{hc}$ with the lattice constant $c$ along $c$-axis. The chiral surface sheet states are clearly visible and uniquely distributed on the surfaces that are parallel to the magnetic moment. Our findings open a promising pathway to realize the QAHE in 3D ferromagnetic insulators.
Strongly Correlated Electrons,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to realize the Quantum Anomalous Hall Effect (QAHE) in three - dimensional ferromagnetic insulators. Specifically, the authors propose a general strategy based on symmetry considerations to explore the possibility of realizing three - dimensional quantum - anomalous - Hall insulators in ferromagnetic materials. By introducing parity analysis of time - reversal - invariant points (TRIM points) in reciprocal space, they develop topological constraints for identifying the existence of three - dimensional quantum - anomalous - Hall insulators. The key contributions of the paper are as follows: 1. **Theoretical Framework**: A general method is proposed to identify the Quantum Anomalous Hall Effect in three - dimensional ferromagnetic insulators, especially by analyzing the parity values of time - reversal - invariant points in reciprocal space to determine the topological properties of the system. 2. **Material Prediction**: Through first - principles calculations, the authors discover a class of ferromagnetic insulating oxides with the space group \(\bar{R}3m\) (No. 166), including layered and non - layered compounds, which can realize the three - dimensional Quantum Anomalous Hall Effect. These materials include the layered Ba\(_2\)Cr\(_7\)O\(_{14}\) and Sr\(_2\)Cr\(_7\)O\(_{14}\), as well as the non - layered hexagonal Fe\(_3\)O\(_4\). 3. **Experimental Verification**: By calculating the intrinsic Hall conductivity and surface states of these materials, it is verified that they do exhibit the characteristics of the three - dimensional Quantum Anomalous Hall Effect, such as the quantized Hall conductivity \(\sigma_{xy}^{3D}=-\frac{3e^2}{hc}\) and topologically protected surface states. Overall, this paper aims to provide new approaches for realizing the Quantum Anomalous Hall Effect in three - dimensional ferromagnetic insulators through theoretical and computational methods, and also provides specific material candidates for future experimental research. This achievement is expected to bring important application prospects in fields such as spintronics.