Abstract:Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favours ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields—a longstanding technological goal in spintronics and multiferroics<a href="/articles/s41586-020-2963-8#ref-CR1">1</a>,<a href="/articles/s41586-020-2963-8#ref-CR2">2</a>—can be achieved only indirectly. Here we experimentally demonstrate direct electric-field control of magnetic states in an orbital Chern insulator<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41586-020-2963-8#ref-CR6">6</a>, a magnetic system in which non-trivial band topology favours long-range order of orbital angular momentum but the spins are thought to remain disordered<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41586-020-2963-8#ref-CR14">14</a>. We use van der Waals heterostructures consisting of a graphene monolayer rotationally faulted with respect to a Bernal-stacked bilayer to realize narrow and topologically non-trivial valley-projected moiré minibands<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="/articles/s41586-020-2963-8#ref-CR17">17</a>. At fillings of one and three electrons per moiré unit cell within these bands, we observe quantized anomalous Hall effects<a href="/articles/s41586-020-2963-8#ref-CR18">18</a> with transverse resistance approximately equal to h/2e2 (where h is Planck's constant and e is the charge on the electron), which is indicative of spontaneous polarization of the system into a single-valley-projected band with a Chern number equal to two. At a filling of three electrons per moiré unit cell, we find that the sign of the quantum anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover, this transition is hysteretic, which we use to demonstrate non-volatile electric-field-induced reversal of the magnetic state. A theoretical analysis<a href="/articles/s41586-020-2963-8#ref-CR19">19</a> indicates that the effect arises from the topological edge states, which drive a change in sign of the magnetization and thus a reversal in the favoured magnetic state. Voltage control of magnetic states can be used to electrically pattern non-volatile magnetic-domain structures hosting chiral edge states, with applications ranging from reconfigurable microwave circuit elements to ultralow-power magnetic memories.

Chirality reversal quantum phase transition in flat-band topological insulators

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

The Anatomy of a Topological Phase Transition in a 2D Chern Insulator

Appearance and Disappearance of Edge States in Topological Insulators

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Topological phase transition in a narrow bandgap semiconductor nanolayer

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Vector Chirality $κ$ Driven Topological Phase Transition and the Associated Anomalous Hall Conductivity Tuning in a Non-Collinear Antiferromagnet

Electrical switching of magnetic order in an orbital Chern insulator

Zeeman-Field-Tuned Topological Phase Transitions in a Two-Dimensional Class-DIII Superconductor.

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Switchable Quantized Signal between Longitudinal Conductance and Hall Conductance in Dual Quantum Spin Hall Insulator TaIrTe4

Direct Observation of Chiral Edge Current at Zero Magnetic Field in a Magnetic Topological Insulator

Edge State, Band Topology, and Time Boundary Effect in the Fine-Grained Categorization of Chern Insulators