Three-dimensional quantum Hall effect and metal–insulator transition in ZrTe5
Fangdong Tang,Yafei Ren,Peipei Wang,Ruidan Zhong,John Schneeloch,Shengyuan A. Yang,Kun Yang,Patrick A. Lee,Genda Gu,Zhenhua Qiao,Liyuan Zhang
DOI: https://doi.org/10.1038/s41586-019-1180-9
IF: 64.8
2019-05-01
Nature
Abstract:The discovery of the quantum Hall effect (QHE)<sup><a href="/articles/s41586-019-1180-9#ref-CR1">1</a>,<a href="/articles/s41586-019-1180-9#ref-CR2">2</a></sup> in two-dimensional electronic systems has given topology a central role in condensed matter physics. Although the possibility of generalizing the QHE to three-dimensional (3D) electronic systems<sup><a href="/articles/s41586-019-1180-9#ref-CR3">3</a>,<a href="/articles/s41586-019-1180-9#ref-CR4">4</a></sup> was proposed decades ago, it has not been demonstrated experimentally. Here we report the experimental realization of the 3D QHE in bulk zirconium pentatelluride (ZrTe<sub>5</sub>) crystals. We perform low-temperature electric-transport measurements on bulk ZrTe<sub>5</sub> crystals under a magnetic field and achieve the extreme quantum limit, where only the lowest Landau level is occupied, at relatively low magnetic fields. In this regime, we observe a dissipationless longitudinal resistivity close to zero, accompanied by a well-developed Hall resistivity plateau proportional to half of the Fermi wavelength along the field direction. This response is the signature of the 3D QHE and strongly suggests a Fermi surface instability driven by enhanced interaction effects in the extreme quantum limit. By further increasing the magnetic field, both the longitudinal and Hall resistivity increase considerably and display a metal–insulator transition, which represents another magnetic-field-driven quantum phase transition. Our findings provide experimental evidence of the 3D QHE and a promising platform for further exploration of exotic quantum phases and transitions in 3D systems.
multidisciplinary sciences