Electric Hall Effect and Quantum Electric Hall Effect

Chaoxi Cui,Run-Wu Zhang,Yilin Han,Zhi-Ming Yu,Yugui Yao

2024-05-24

Abstract:Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a transverse current is generated when a system carrying an electron current is placed in a magnetic field perpendicular to the currents. In this work, we propose the electric counterparts of these two Hall effects, termed as electric Hall effect (EHE) and quantum electric Hall effect (QEHE). The EHE and QEHE emerge in 2D magnetic systems, where the transverse current is generated by applying an electric gate-field instead of a magnetic field. We present a symmetry requirement for intrinsic EHE and QEHE. With a weak gate-field, we establish an analytical expression of the intrinsic EHE coefficient. We show that it is determined by intrinsic band geometric quantities: Berry curvature and its polarizability which consists of both intraband and interband layer polarization. Via first-principles calculations, we investigate the EHE in the monolayer Ca(FeN)$_2$, where significant EHE coefficient is observed around band crossings. Furthermore, we demonstrate that the QEHE can appear in the semiconductor monolayer $\rm BaMn_2S_3$, of which the Hall conductivity exhibits steps that take on the quantized values $0$ and $\pm1$ in the unit of $e^2/h$ by varying the gate-field within the experimentally achievable range. Due to the great tunability of the electric gate-field, the EHE and QEHE proposed here can be easily controlled and should have more potential applications.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

This paper aims to explore a new type of Hall effect, namely the Electric Hall Effect (EHE) and its quantum version - the Quantum Electric Hall Effect (QEHE). The traditional Hall effect and the quantum Hall effect were first discovered in two - dimensional non - magnetic systems. When the electron current in the system is affected by a magnetic field perpendicular to the current direction, a transverse current will be generated. However, this paper proposes the electrical counterparts of these Hall effects, that is, in two - dimensional magnetic systems, a transverse current is generated by applying an electrostatic field perpendicular to the sample instead of a magnetic field.

Specifically, the paper derives the analytical expression of the intrinsic EHE coefficient by analyzing the symmetry requirements, and shows that it is closely related to the Berry curvature and its polarizability (including intra - band and inter - band layer polarization). In addition, through first - principles calculations, the paper also studies the EHE phenomenon in monolayer Ca(FeN)₂, and finds that there is a significant EHE coefficient near the band - crossing point. Further, the paper predicts that in the semiconductor monolayer BaMn₂S₃, QEHE can be achieved by experimentally feasible changes in the electric field strength, and its Hall conductivity exhibits step characteristics with values of 0 and ±1 (in units of e²/h).

In conclusion, this paper not only proposes a new Hall - effect mechanism, but also provides an effective way to generate and control Hall currents by electrical methods. This opens up new possibilities for future applications in the fields of materials science and condensed - matter physics.