Abstract:We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, these distortions increase the band gap but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators, we demonstrate that by increasing the thickness there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulating phase with the presence of two massive surface Dirac fermions hybridized with the persisting trivial surface states. Therefore, we have the co-presence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1=10 nm, and they become spin-orbit insulators between tc1=10 nm and tc2=17 nm, while they transit to the topological phase above the critical thickness of tc2=17 nm. These critical thickness values are in the range of the typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb(1-x)Sn(x)Te nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the doping concentration.

Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film

Zeeman-field-induced Valley-Dependent Topological Phase Transitions on the Surface of a Topological Crystalline Insulator SnTe

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Topological phases of topological insulator thin films

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

First-principles study of the topological surface states of -Sn(111)

Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states

Electronic properties of SnTe-class topological crystalline insulator materials*

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Strain-induced two-dimensional topological crystalline insulator

Superlattice Valley Engineering for Designer Topological Insulators

Topological Crystalline Insulators in the SnTe Material Class

Emergence of ferroelectric topological insulator as verified by quantum Hall effect of surface states in (Sn,Pb,In)Te films

Designer Topological Insulators in Superlattices

Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices

A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry

Topological Dirac semimetal phases in InSb/$\alpha$-Sn semiconductor superlattices

Topological properties of the [110] SnTe nanowires