Abstract:Gapless Dirac surface states are protected at the interface of topological and normal band insulators. In a binary superlattice bearing such interfaces, we establish that valley-dependent dimerization of symmetry-unrelated Dirac surface states can be exploited to induce topological quantum phase transitions. This mechanism leads to a rich phase diagram that allows us to design strong, weak, and crystalline topological insulators. Our ab initio simulations further demonstrate this mechanism in [111] and [110] superlattices of calcium and tin tellurides.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to design and implement new topological insulators (TIs), especially to induce topological quantum phase transitions through binary superlattice structures, so as to be able to regulate the formation of strong topological insulators (sTI), weak topological insulators (wTI) and crystalline topological insulators (cTI). Specifically: 1. **Surface - state dimerization mechanism**: The paper explores how to use the coupling (i.e., dimerization) between Dirac surface states at the interface in different layers to induce topological quantum phase transitions without breaking any symmetry. This mechanism allows the design of various topological insulators by adjusting the valley - dependent inter - layer coupling. 2. **Material selection and verification**: The author selects calcium telluride (CaTe) as the spacer material to form a superlattice structure with tin telluride (SnTe). Through first - principles calculations (density - functional theory simulations), the feasibility of this mechanism in the [111] and [110] directions is verified, and it is shown how different types of topological insulators can be achieved by changing the layer thickness. ### Formula summary - **Surface - state Hamiltonian**: \[ H_v(k)=E_v+\tau_z H_v+\tau_x(t_v + t'_v\cos k_z)+\tau_y t'_v\sin k_z \] where \(\tau_z = \pm1\) represents two interfaces, \(E_v\) reflects the possible particle - hole asymmetry, and \(t_v\) and \(t'_v\) represent the transition intensities through the parent layer and the spacer layer respectively. - **Band - gap formula**: \[ \text{Band - gap}=2\left||t_v|-|t'_v|\right| \] - **Z2 invariant**: \[ (-1)^{\nu_0}=\prod_v\delta_v \] where \[ \delta_v=\xi_v(0)\xi_v(\pi)=(-1)^{\Theta(|t'_v|-|t_v|)} \] Here, \(\Theta(x)\) is the Heaviside step function. ### Conclusion Through the above mechanism, the author shows how to design different types of topological insulators by adjusting the inter - layer coupling strengths \(t_v\) and \(t'_v\). In particular, in the SnTe/CaTe superlattice, the transition from a trivial insulator to a strong, weak or crystalline topological insulator can be achieved by changing the layer thickness. This provides a theoretical basis and a technical path for the future design and synthesis of new topological materials.

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