Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Interfacial protection of topological surface states in ultrathin Sb films.

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry

Bulk-to-surface misorientation and the spin texture of topological insulators

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Zeeman-field-induced Valley-Dependent Topological Phase Transitions on the Surface of a Topological Crystalline Insulator SnTe

DFT-Based Engineering of Dirac Surface Energy in Topological-Insulator Multilayers

Topological Surface States Protected From Backscattering by Chiral Spin Texture

A computational investigation of topological insulator Bi2Se3 film

Quasiparticle Dynamics In Reshaped Helical Dirac Cone Of Topological Insulators

Fully Gapped Topological Surface States in Bi2Se3 Films Induced by a D-Wave High-Temperature Superconductor

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

Realization of Tunable Dirac Cone and Insulating Bulk States in Topological Insulators (Bi1−xsbx)2te3

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching