Abstract:We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Hybridization-induced gapped and gapless states on the surface of magnetic topological insulators

Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators

Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 And

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Surface States of the Topological Insulator Bi_{1-x}Sb_x

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures

Evolution of Topological Surface States in Antimony Ultra-Thin Films

Realizing Gapped Surface States in the Magnetic Topological Insulator MnBi2−xSbxTe4

Electronic structures of topological insulator Bi2Te3 surfaces with non-conventional terminations

Electron-Phonon Coupling on the Surface of Topological Insulators

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Band Structure of Topological Insulator BiSbTe1.25Se1.75

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Spatial Distribution of Photo-Induced Anomalous Hall Effects of the Top and Bottom Surface States in Topological Insulators Sb2Te3

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Symmetry-driven Anisotropic Coupling Effect in Antiferromagnetic Topological Insulator: Mechanism for a Quantum Anomalous Hall State with a High Chern Number