Abstract:The surface reconstructions of decapped InAs(001) and In₀.₅₃Ga₀.₄₇As(001) have been studied using scanning tunneling microscopy (STM). Quantitative comparison of the In₀.₅₃Ga₀.₄₇As(001)-(4x2) and InAs(001)-(4x2) show the reconstructions are almost identical, but In₀.₅₃Ga₀.₄₇As(001)-(4x2) has at least a 4x higher surface defect density even on the best samples. For both In₀.₅₃Ga₀.₄₇As(001)-(4x2) and InAs(001)-(4x2), density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. The passivation of InAs(001) and InGaAs(001) surface using three different oxides (SiO, Ga₂O and In₂O) was studied using STM, STS, and DFT modeling of bonding and electronic structures. SiO molecules have higher self-binding energy so that they bond themselves and form nanoclusters on InAs(001)-(4x2) surface. Conversely, both Ga₂O and In₂O molecules bond to the As atoms at the edge of the rows. However, Ga2O molecules also bond to preexisting Ga₂O oxide on the surface. At full coverage with post-deposition annealing, SiO oxide remains as nanoclusters, Ga₂O oxide forms disordered structures with the large flat terraces on the surface, while In₂O oxide bonds with the trough In atoms to form new O-In bonding sites and forms ordered structures running in the [110] direction on In₀.₅₃Ga₀.₄₇As(001)-(4x2). STS results show that Ga₂O oxide does not passivate the interface nor unpin the In₀.₅₃Ga₀.₄₇As(001)-(4x2) surface consistent with its inability to form monolayer ordered islands on the surface; conversely, In₀.₅₃Ga₀.₄₇As(001)-(4x2) has an ordered monolayer coverage and is unpinned

Atomic structure of the Ge(112)-(4 x 1) - In reconstruction

ATOMIC STRUCTURE OF THE Ge(112)-(4 × 1)-In RECONSTRUCTION

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Surface Structure of the (3x1) and (3x2) Reconstructions of Ge(113)

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Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Atomic Structure Of The Si(103)1x1-In Surface

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

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Atomic Structures Of The Ge/Si(113)-(2x2) Surface

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Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Atomic and Electronic Structures of Oxides on III-V Semiconductors :

SCANNING TUNNELING MICROSCOPY INVESTIGATION OF THE Si(103)- (1 × 1)–in SURFACE

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{310} faceting of the Ge(001) 2 × 1 surface induced by indium

Atomic Structure of the Ge(101) Surface

Interface-Induced Complex Electronic Interference Structures in Ag Films on Ge(111)