{310} faceting of the Ge(001) 2 × 1 surface induced by indium

Zheng Gai,Hang Ji,Yi He,Chuan Hu,R.G. Zhao,W.S. Yang
DOI: https://doi.org/10.1016/0039-6028(95)00661-3
IF: 1.9
1995-01-01
Surface Science
Abstract:In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 X 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets. We suppose that the faceting process proceeds through expansion of many mini-{310}-facets in the cost of the original (001) surface, instead of via any other transient surface structures.
What problem does this paper attempt to address?