Studies of indium nanostructures growth models on A3B6 layered templates
P. V. Galiy,T. M. Nenchuk,A. Ciszewski,P. Mazur,V. I. Dzyuba,T. R. Makar
DOI: https://doi.org/10.1080/15421406.2024.2361970
IF: 0.7
2024-06-05
Molecular Crystals and Liquid Crystals
Abstract:This article explores the surface architecture formation on layered A 3 B 6 semiconductors, such as In 4 Se 3 , InSe, and InTe, focusing on kinetics of surface roughness parameters, such as RMS, skewness and kurtosis, and power spectral density (PSD) under indium deposition studied through large-scale 1 × 1 μm 2 and 150 × 150 nm 2 scanning tunneling microscopy (STM) images analysis. Our findings reveal common kinetics of surface parameters across different crystals, suggesting fundamental similarities in their interface kinetics. Particularly, PSD analysis elucidates the role of low-frequency spatial structures, underscoring their significance in surface roughness kinetics to some extent independent of the specific layered crystal surface structure.
chemistry, multidisciplinary,materials science,crystallography