Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

X.S. Zhang,C.Y. Feng,H. Sui,S. Bao,Y.B. Xu,P.S. Xu,S.H. Xu,H.B. Pan
DOI: https://doi.org/10.1016/0168-583X(94)00711-X
1995-01-01
Abstract:The formation of the Schottky barrier (SE) at the Na induced 3 X 1 surface structural transition on Si(111)-(7 X 7) surface has been investigated using LEED, AES and XPS with a synchrotron radiation source. With regard to different substrate temperatures during Na deposition the tendency of the SE to change is similar. Combining these results, we conclude that in the initial stage of formation of the Schottky barrier for the Na-Si interface the height is determined by the basic interaction between Na and Si atoms. Proper annealing of the substrate, however, is conducive to an ordered arrangement.
What problem does this paper attempt to address?