Influence of Surface Bond on Electronic Structure of Si (111) Quantum Surface
YIN Jun,HUANG Wei-qi,HUANG Zhong-mei,MIAO Xin-jian,LIU Ren-ju,ZHOU Nian-jie
DOI: https://doi.org/10.3788/fgxb20143509.1082
2014-01-01
Chinese Journal of Luminescence
Abstract:We regard the nanocrystalline silicon films as an ideal one-dimensional quantum limiting surface structure, and study the band structure and density of states of the different thickness silicon (111) quantum surface by the first-principles calculation. As the change of the thickness of the quantum surface well passivated by Si-H bond, the band gap mainly follow the quantum confine-ment effect. When the silicon (111) quantum surface contains Si-N bond, the simulated results show that the band gap is mainly determined by the quantum confinement effect in a certain range of thickness, but beyond the thickness, the band gap is determined by both the quantum confinement effect and bond structure. While maintaining a constant thickness, the greater doping concentration of the quantum surface, the more obvious the band gap narrowing effect. Similarly, the simulated result of silicon (111) quantum surface which contain Si-Yb has the same effect. It is worth noting that almost all of the simulated results show that the band structures of the quantum surface show quasi-direct band gap characteristics.