Abstract:We report on total-energy electronic structure calculations in the density-functional theory performed for the ultra-thin atomic layers of Si on Ag(111) surfaces. We find several distinct stable silicene structures: root 3 x root 3, 3 x 3, root 7 x root 7 with the thickness of Si increasing from monolayer to quad-layer. The structural bistability and tristability of the multilayer silicene structures on Ag surfaces are obtained, where the calculated transition barriers infer the occurrence of the flip-flop motion at low temperature. The calculated scanning tunneling microscope (STM) images agree well with the experimental observations. We also find the stable existence of 2 x 1 pi-bonded chain and 7 x 7 dimeradatom-stacking fault Si(111)-surface structures on Ag(111), which clearly shows the crossover of silicene-silicon structures for the multilayer Si on Ag surfaces. We further find the absence of the Dirac states for multilayer silicene on Ag(111) due to the covalent interactions of the silicene-Ag interface and Si-Si interlayer. Instead, we find a new state near the Fermi level composed of pi orbitals located on the surface layer of root 3 x root 3 multilayer silicene, which satisfies the hexagonal symmetry and exhibits the linear energy dispersion. By examining the electronic properties of 2 x 1 p-bonded chain structures, we find that the surface-related p states of multilayer Si structures are robust on Ag surfaces.

Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

Delocalized Surface State in Epitaxial Si(111) Film with Spontaneous √3 × √3 Superstructure

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Structural Investigation of the So-Called Ca/Si(111)-(5× 1) Surface

Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Si(111)-$\sqrt{21}\times\sqrt{21}$-(Ag+Cs) Surface Studied by Scanning Tunneling Microscopy and Angle-Resolved Photoemission Spectroscopy

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Atomic Structure Of The Si(112) 7x1-In Surface

Electronic Structure Of Identical Metal Cluster Arrays On Si(111)-7x7 Surfaces

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Various Atomic Structures of Monolayer Silicene Fabricated on Ag(111)

Atomic Structure Of The Si(103)1x1-In Surface

Silicene vs. ordered 2D silicide: the atomic and electronic structure of the Si-$(\sqrt{19}\times\sqrt{19})R23.4^{\circ}$/Pt(111) surface reconstruction

APPLICATION OF THE IMPROVED KLEED/CMTA METHOD ON Si(111) 3~(1/2)×3~(1/2)-Al SURFACE

Electronic Evidence Of Asymmetry In The Si(111) Root 3x3 Root-Ag Structure

Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface

Crossover Between Silicene and Ultra-Thin Si Atomic Layers on Ag(111) Surfaces

The fate of the 2 root 3 x 2 root 3 R(30 degrees) silicene phase on Ag(111)