Abstract:We report a surface x-ray diffraction study of the structure of In films grown on Si(111)-(7 x 7) and Si(111)-(root 3 x root 3)-In substrates at a low temperature (135 K). The (7 x 7) reconstruction of the clean Si(111) surface is found to persist upon burial by the In. X-ray reflectivity measurements yield patterns that deviate strongly from the ideal case; the results suggest a complex In film structure, possibly distorted by the corrugated interfacial reconstruction. By contrast, In films grown on the Si(111)-(root 3 x root 3)-In surface exhibit reflectivity data that are much closer to the ideal case. The films are found to grow approximately layer by layer, resulting in a relatively small roughness. Upon annealing, the films develop preferred thicknesses at 10, 13, and 16 monolayers (MLs). Previous photoemission studies revealed preferred thicknesses at 4 and 7 MLs. Putting these results together, the preferred thickness sequence, 4, 7, 10, 13, and 16 ML, establishes a trilayer oscillation period. This period is expected from the known electronic structure of In, and arises from quantum confinement of the In valence electrons. This is the second example, after the well-known bilayer period in Pb, which shows quantum oscillations over a wide range of film thickness.

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)

SURFACE MORPHOLOGY AND GROWTH MECHANISM OF THE Al FILMS DEPOSITED ON LIQUID SURFACES

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Catalystlike Behavior of Si Adatoms in the Growth of Monolayer Al Film on Si(111)

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Growth Mechanism and Microstructure of Al Films Deposited on Ionic Liquid Surfaces

Study of Si and Ge growth on Si(100) surface

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Interaction of Surface and Interface Plasmons in Extremely Thin Al Films on Si(111)

Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy