Abstract:We report a surface x-ray diffraction study of the structure of In films grown on Si(111)-(7 x 7) and Si(111)-(root 3 x root 3)-In substrates at a low temperature (135 K). The (7 x 7) reconstruction of the clean Si(111) surface is found to persist upon burial by the In. X-ray reflectivity measurements yield patterns that deviate strongly from the ideal case; the results suggest a complex In film structure, possibly distorted by the corrugated interfacial reconstruction. By contrast, In films grown on the Si(111)-(root 3 x root 3)-In surface exhibit reflectivity data that are much closer to the ideal case. The films are found to grow approximately layer by layer, resulting in a relatively small roughness. Upon annealing, the films develop preferred thicknesses at 10, 13, and 16 monolayers (MLs). Previous photoemission studies revealed preferred thicknesses at 4 and 7 MLs. Putting these results together, the preferred thickness sequence, 4, 7, 10, 13, and 16 ML, establishes a trilayer oscillation period. This period is expected from the known electronic structure of In, and arises from quantum confinement of the In valence electrons. This is the second example, after the well-known bilayer period in Pb, which shows quantum oscillations over a wide range of film thickness.

A new polymer-iodine combination (iodoplex) for treatment of donor sites: a preliminary controlled study.

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Surface structure of the 3x3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Low Loss Single Crystalline Aluminum Films Obtained on Si (1 1 1) Through Interfacial Modulation

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

Symmetry-dependent Screening of Surface Plasmons in Ultrathin Supported Films: the Case of Al/Si(111)

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

Interaction of Surface and Interface Plasmons in Extremely Thin Al Films on Si(111)

Catalystlike Behavior of Si Adatoms in the Growth of Monolayer Al Film on Si(111)

Atomic Structure and Bonding of Epitaxial CU Films on (1120) A-Al203

Composition Dependence Of Surface Morphology Of Ultrathin A-Sige : H Alloys Studying By Atomic Force Microscopy

Thickness Dependence of the Surface Plasmon Dispersion in Ultrathin Aluminum Films on Silicon