Abstract:Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Alloying, de-alloying and reentrant alloying in (sub-)monolayer growth of Ag on Pt(111)

Single-layer of Bi$_{1-x}$Sb$_x$ grown on Ag(111)

Surface Alloying Effects in the Growth of Au on Pb(111) Thin Film

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Interfacial Effects on the Growth of Atomically Thin Film: Group VA Elements on Au(111)

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Strongly Enhanced Electron-Phonon Coupling in the Rashba-Split State of the Bi/Ag(111) Surface Alloy

Tuning the spin texture in binary and ternary surface alloys on Ag(111)

Far-from-equilibrium Film Growth on Alloy Surfaces: Ni and Al on NiAl(110)

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Growth of Ag on Pb Island with Si(111) Substrate

Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface

An ab initio approach to anisotropic alloying into the Si(001) surface

Surface Alloying of Submonolayer Pb on Cu(111) Studied by Photoemission

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Precise Synthesis of In-Bi Alloy Nanodroplets Through Controlled Surface Reactions on a Si(111) Surface at Ambient Temperature

Aggregation of BiTe Monolayer on Bi$_2$Te$_3$(111) Induced by Diffusion of Intercalated Atoms in van der Waals Gap