Abstract:The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001). As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Effects of Monolayer Bi on the Self-Assembly of DBBA on Au(111)

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Bottom-Up Fabrication Of Graphene Nanostructures On Ru (10(1)Over-Bar0)

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

On-Surface Synthesis of Graphene Nanoribbons: Photoelectron Spectroscopy Reveals Impact of Substrate Reactivity

STRUCTURAL AND ELECTRONIC PROPERTIES OF Bi/Au(110)

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Chiral Self-Assembly of Nonplanar 10,10'-Dibromo-9,9'-bianthryl Molecules on Ag(111).

Interfacial Effects on the Growth of Atomically Thin Film: Group VA Elements on Au(111)

Metal Atoms Participated in the Self-Assembly and On-Surface Reaction Behaviors of 1,4-DBN on Ag(111) Surface.

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Structural Properties of Bi/Au(110).

Achieving a Large Energy Gap in Bi(110) Atomically Thin Films

Electronic Properties of Substitutionally Boron-doped Graphene Nanoribbons on a Au(111) Surface

An in Situ Scanning Tunneling Microscopic Study of Electrodeposition of Bismuth on Au(111) in A 1-Butyl-3-methylimidazolium Tetrafluoroborate Ionic Liquid Precursor Adsorption and Underpotential Deposition

Evolution of the Electronic Structure in Ultrathin Bi(111) Films

Band gap engineering by Bi intercalation of graphene on Ir(111)

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

An in Situ Scanning Tunneling Microscopic Study of Electrodeposition of Bismuth on Au(1 1 1) in a 1-Butyl-3-methylimidazolium Tetrafluoroborate Ionic Liquid: Precursor Adsorption and Underpotential Deposition

Bi-intercalated epitaxial graphene on SiC(0001)