Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Evolution of the Electronic Structure in Ultrathin Bi(111) Films

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Band Structures of Ultrathin Bi(110) Films on Black Phosphorus Substrates Using Angle-Resolved Photoemission Spectroscopy

Strongly Compressed Bi (111) Bilayer Films on Bi2Se3 Studied by Scanning Tunneling Microscopy

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Evolution of the electronic structure of ultrathin MnBi2Te4 Films

Electronic Structure Evolution at DBBA/Au(111) Interface W/O Bismuth Insertion Layer

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

STRUCTURAL AND ELECTRONIC PROPERTIES OF Bi/Au(110)

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Bi(111) Thin Film with Insulating Interior but Metallic Surfaces.