Abstract:Due to the novel physical properties induced by the strong spin orbit coupling and band inversions in the energy band structure, two-dimensional topological insulator has become a hot research point in the field of condensed matter physics and material science in recent years. Particularly, two-dimensional topological insulator may host exotic Majorana fermionic excitations in its edge state if superconductivity is introduced. Bi thin film with (111) orientation proves to be a two-dimensional topological insulator both in theory and in experiment. However, the topological nature of Bi thin film with (110) orientation has not yet been confirmed. In this study, high quality Bi(110) thin films are successfully prepared on superconductor NbSe2 surfaces, by the molecular beam epitaxial technology at ambient temperature and a low deposition rate (~24℃,~3 min/bilayer). The morphologies and electronic properties of the samples are studied by using scanning tunneling microscopy and spectroscopy. The experimental results reveal that the growth mode changes from bilayer (BL) in BL mode to monolayer (ML) in ML mode. Such transition takes place at a critical height of about 4 BLs. The mechanism of the growth mode transition is believed to be induced by the drastic variation of the surface energies of the thin films with different thickness values. Due to the large coverage of Bi(110) film on the NbSe2 substrate, it is almost impossible to find the exposed areas of NbSe2 substrate surface in practice. Especially on the sample with a large number of layers of Bi thin film, it is hard to directly determine the number of layers for each film. Hence, the critical thickness could be only estimated by controlling the deposition time and growth rate combining with the measurements of stage height of the film. The nearly identical local density of states wherever measured in the interior of a terrace or at the step edges can be discerned from the dI/dV spectra, which is thus hard to corroborate with non-trivial topology in either BL or ML thick Bi(110) film. The superconductivity induced by proximity effect from the superconducting substrate NbSe2 is also observed on the thin films. Through Bardeen-Cooper-Schrieffer type data fitting, the superconducting gap on the Bi thin film is estimated at about 0.5 meV. In addition, the quantum well state, which is often observed in thin films, is also revealed from the Bi(110) thin films, whose characteristic is equal energy spacing between peaks in dI/dV spectra. Noticeably, the spectral shapes of BL and ML are similar, and the local density of states from adjacent film layers displays an approximate πup phase shift.

Band Structures of Ultrathin Bi(110) Films on Black Phosphorus Substrates Using Angle-Resolved Photoemission Spectroscopy

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

Electronic Structure of Black Phosphorus Studied by Angle-Resolved Photoemission Spectroscopy

Growth of 2D Black Phosphorus Film from Chemical Vapor Deposition.

Evolution of the Electronic Structure in Ultrathin Bi(111) Films

Tunable topological edge states in black phosphorus-like Bi(110)

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Anisotropic Ultraviolet-Plasmon Dispersion In Black Phosphorus

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Surface Structures of Black Phosphorus Investigated with Scanning Tunneling Microscopy

Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain

Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain

Scanning Tunneling Microscopy Research of Bi(110) Thin Films Grown on NbSe2

Phosphorus Nanostripe Arrays on Cu(110): A Case Study to Understand the Substrate Effect on the Phosphorus Thin Film Growth

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Surface Buckling of Black Phosphorus: Determination, Origin, and Influence on Electronic Structure

Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus

Investigation of Electronic and Atomic Structure and Transport Properties of Black Phosphorus Single Crystals