Abstract:Black phosphorus (b-P) single crystals having the n-type electrical conductivity produced in a high pressure set-up (~1 GPa) with six diamond anvils at 800 °C for 12 h have been studied. The electrical conductivity σ( Т , В ) and the Hall constant R h ( Т , В ) have been analyzed within one-band and two-band models as functions of temperature in the 2 < Т < 300 K range and magnetic field in the 0 < В < 8 T range. Fitting of the experimental σ( Т , В ) and R h ( Т , В ) curves suggests the following key properties of the crystals: (1) intrinsic conductivity type, (2) approximately equal electron and hole concentrations and mobilities, (3) anisotropic behavior of electron and hole conductivities, concentrations and mobilities and (4) combination of negative and positive contributions to magnetoresistance (magnetoresistive effect, MR). In a zero magnetic field the anisotropy coefficient α = [σ а ( Т ) – σ с (Т)]/σ с ( Т ) below 50–70 K is positive whereas above 220 K its sign changes to negative due to a specific combination of the temperature dependences of carrier concentration and mobility. It has been shown that the negative sign of relative MR (negative magnetoresistive effect) dominates at T < 25 K and B < 6 T and is presumably caused by the effects of strong localization resulting from structural disorder. The positive MR sign (positive magnetoresistive effect) is associated with the Lorentz mechanism of carrier movement and exhibits itself above 25 K in 6–8 T magnetic fields.

Investigation of Electronic and Atomic Structure and Transport Properties of Black Phosphorus Single Crystals

Electrical and galvanomagnetic properties of black phosphorus single crystals

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Probing The An Isotropic Behaviors Of Black Phosphorus By Transmission Electron Microscopy, Angular-Dependent Raman Spectra, And Electronic Transport Measurements

Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus

Pressure-Induced Electronic Transition in Black Phosphorus

Isolation and characterization of few-layer black phosphorus

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

First principles investigation of pressure related quantum transport in pure black phosphorus devices

Electronic and magnetic properties of black phosphorus

Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects

Electric field effect in ultrathin black phosphorus

Cross-Examination of Photoinitiated Carrier and Structural Dynamics of Black Phosphorus at Elevated Fluences

Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation

Pressure-induced Lifshitz transition in black phosphorus

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Electronic Self-Passivation of Single Vacancy in Black Phosphorus Via Ionization.

Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy

Surface Buckling of Black Phosphorus: Determination, Origin, and Influence on Electronic Structure