Abstract:Abstract Structural defects play an important role in the optimization of material structures and properties, especially in low-dimensional systems such as two-dimensional (2D) materials. In this work, we investigated the formation, aggregation, and diffusion of vacancy defects in atomically thin black phosphorus (BP) via in situ high-resolution transmission electron microscopy. Vacancy defects including di-vacancies (DVs), vacancy clusters (e.g. tetra-vacancy and TV), and vacancy lines were confirmed as the primary forms of structural defects in BP. DV and TV defects were found to be highly mobile. The defects preferentially diffused and migrated along the diagonal and in a zigzag pattern (rather than an armchair pattern). After prolonged thermal excitation and electron-beam irradiation, all these as-formed vacancies tended to aggregate and line up parallel to the zigzag pattern direction to form extended vacancy lines with a total length reaching hundreds of nanometers or even the micrometer scale. Ab initio calculations were conducted to reveal the vacancy migration pathway, energy landscape, and modifications to the electronic structure of the host BP monolayers (MLs). It was found that the migration of a 5-8-5 DV was accomplished via sequential structural transformations including several transitions and intermediate configurations, such as 5-7-7-5 DVs. The associated migration barriers were determined as 2.1 eV for diagonal migration and 2.6 eV along the zigzag path, respectively. Calculations further confirmed that the presence of vacancy defects induced considerable electronic structure modification of the host ML-BP; for example, the bandgap was reduced from 0.9 eV (for defect-free ML-BP) to 0.7 eV in the presence of vacancy lines with a concentration of 1.2 at.%. The present study expands the current understanding of the formation and dynamic behaviors of primary vacancy defects and illustrates methods available to alter the electronic structures of 2D BP materials. It can further serve as a guideline for the function-oriented design and fabrication of BP-based devices via precisely controlled defect engineering.

Electronic Self-Passivation of Single Vacancy in Black Phosphorus Via Ionization.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere

Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Investigation of Electronic and Atomic Structure and Transport Properties of Black Phosphorus Single Crystals

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

Evolution of Intrinsic Vacancies and Prolonged Lifetime of Vacancy Clusters in Black Phosphorene

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Evolution of Intrinsic Vacancies and Prolonged Lifetimes of Vacancy Clusters in Black Phosphorene.

Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus

Electron Matters: Recent Advances in Passivation and Applications of Black Phosphorus

Passivation of Black Phosphorus via Self-Assembled Organic Monolayers by van der Waals Epitaxy.

Covalent Functionalization and Passivation of Exfoliated Black Phosphorus via Aryl Diazonium Chemistry

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Electric field effect in ultrathin black phosphorus

Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films

Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms

Metastable Interlayer Frenkel Pair Defects by Dipole-like Strain Fields for Dimensional Distortion in Black Phosphorus

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation

Pressure-Induced Electronic Transition in Black Phosphorus