Abstract:Abstract Structural defects play an important role in the optimization of material structures and properties, especially in low-dimensional systems such as two-dimensional (2D) materials. In this work, we investigated the formation, aggregation, and diffusion of vacancy defects in atomically thin black phosphorus (BP) via in situ high-resolution transmission electron microscopy. Vacancy defects including di-vacancies (DVs), vacancy clusters (e.g. tetra-vacancy and TV), and vacancy lines were confirmed as the primary forms of structural defects in BP. DV and TV defects were found to be highly mobile. The defects preferentially diffused and migrated along the diagonal and in a zigzag pattern (rather than an armchair pattern). After prolonged thermal excitation and electron-beam irradiation, all these as-formed vacancies tended to aggregate and line up parallel to the zigzag pattern direction to form extended vacancy lines with a total length reaching hundreds of nanometers or even the micrometer scale. Ab initio calculations were conducted to reveal the vacancy migration pathway, energy landscape, and modifications to the electronic structure of the host BP monolayers (MLs). It was found that the migration of a 5-8-5 DV was accomplished via sequential structural transformations including several transitions and intermediate configurations, such as 5-7-7-5 DVs. The associated migration barriers were determined as 2.1 eV for diagonal migration and 2.6 eV along the zigzag path, respectively. Calculations further confirmed that the presence of vacancy defects induced considerable electronic structure modification of the host ML-BP; for example, the bandgap was reduced from 0.9 eV (for defect-free ML-BP) to 0.7 eV in the presence of vacancy lines with a concentration of 1.2 at.%. The present study expands the current understanding of the formation and dynamic behaviors of primary vacancy defects and illustrates methods available to alter the electronic structures of 2D BP materials. It can further serve as a guideline for the function-oriented design and fabrication of BP-based devices via precisely controlled defect engineering.

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Vacancy migrations in carbon nanotubes.

Evolution of Intrinsic Vacancies and Prolonged Lifetime of Vacancy Clusters in Black Phosphorene

Evolution of Intrinsic Vacancies and Prolonged Lifetimes of Vacancy Clusters in Black Phosphorene.

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Highly Itinerant Atomic Vacancies in Phosphorene

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene

First-principles calculations to investigate electronic structures and magnetic regulation of non-metallic elements doped BP with point defects

Strain Controlled Ferromagnetic–ferrimagnetic Transition and Vacancy Formation Energy of Defective Graphene

Metastable Interlayer Frenkel Pair Defects by Dipole-like Strain Fields for Dimensional Distortion in Black Phosphorus

Impact of Defect and Doping on the Structural and Electronic Properties of Monolayer Boron Phosphide

Chain Vacancies in 2D Crystals.

Identification of Lattice Oxygen in Few-Layer Black Phosphorous Exfoliated in Ultrahigh Vacuum and Largely Improved Ambipolar Field-Effect Mobilities by Hydrogenation and Phosphorization

Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Long-Term Evolution of Vacancies in Large-Area Graphene

Electronic Self-Passivation of Single Vacancy in Black Phosphorus Via Ionization.

First-principles Study of Spintronics Properties in Black Phosphorus Materials

Structural Engineering of Two-dimensional Black Phosphorus towards Advanced Photonic Integrated Circuits