Abstract:Abstract Structural defects play an important role in the optimization of material structures and properties, especially in low-dimensional systems such as two-dimensional (2D) materials. In this work, we investigated the formation, aggregation, and diffusion of vacancy defects in atomically thin black phosphorus (BP) via in situ high-resolution transmission electron microscopy. Vacancy defects including di-vacancies (DVs), vacancy clusters (e.g. tetra-vacancy and TV), and vacancy lines were confirmed as the primary forms of structural defects in BP. DV and TV defects were found to be highly mobile. The defects preferentially diffused and migrated along the diagonal and in a zigzag pattern (rather than an armchair pattern). After prolonged thermal excitation and electron-beam irradiation, all these as-formed vacancies tended to aggregate and line up parallel to the zigzag pattern direction to form extended vacancy lines with a total length reaching hundreds of nanometers or even the micrometer scale. Ab initio calculations were conducted to reveal the vacancy migration pathway, energy landscape, and modifications to the electronic structure of the host BP monolayers (MLs). It was found that the migration of a 5-8-5 DV was accomplished via sequential structural transformations including several transitions and intermediate configurations, such as 5-7-7-5 DVs. The associated migration barriers were determined as 2.1 eV for diagonal migration and 2.6 eV along the zigzag path, respectively. Calculations further confirmed that the presence of vacancy defects induced considerable electronic structure modification of the host ML-BP; for example, the bandgap was reduced from 0.9 eV (for defect-free ML-BP) to 0.7 eV in the presence of vacancy lines with a concentration of 1.2 at.%. The present study expands the current understanding of the formation and dynamic behaviors of primary vacancy defects and illustrates methods available to alter the electronic structures of 2D BP materials. It can further serve as a guideline for the function-oriented design and fabrication of BP-based devices via precisely controlled defect engineering.

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Substitutional tin acceptor states in black phosphorus

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Anomalous Size Dependence of Optical Properties in Black Phosphorus Quantum Dots

First-principles Study of Spintronics Properties in Black Phosphorus Materials

Gate-tunable strong-weak localization transition in few-layer black phosphorus.

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Photoabsorption Tolerance of Intrinsic Point Defects and Oxidation in Black Phosphorus Quantum Dots.

Impact of Defect and Doping on the Structural and Electronic Properties of Monolayer Boron Phosphide

Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus

Impurity Scattering and Friedel Oscillations in Mono-Layer Black Phosphorus

Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

Ambipolar Quantum Transport in Few-Layer Black Phosphorus

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Quantum Transport in Ambipolar Few-layer Black Phosphorus