Abstract:Abstract Structural defects play an important role in the optimization of material structures and properties, especially in low-dimensional systems such as two-dimensional (2D) materials. In this work, we investigated the formation, aggregation, and diffusion of vacancy defects in atomically thin black phosphorus (BP) via in situ high-resolution transmission electron microscopy. Vacancy defects including di-vacancies (DVs), vacancy clusters (e.g. tetra-vacancy and TV), and vacancy lines were confirmed as the primary forms of structural defects in BP. DV and TV defects were found to be highly mobile. The defects preferentially diffused and migrated along the diagonal and in a zigzag pattern (rather than an armchair pattern). After prolonged thermal excitation and electron-beam irradiation, all these as-formed vacancies tended to aggregate and line up parallel to the zigzag pattern direction to form extended vacancy lines with a total length reaching hundreds of nanometers or even the micrometer scale. Ab initio calculations were conducted to reveal the vacancy migration pathway, energy landscape, and modifications to the electronic structure of the host BP monolayers (MLs). It was found that the migration of a 5-8-5 DV was accomplished via sequential structural transformations including several transitions and intermediate configurations, such as 5-7-7-5 DVs. The associated migration barriers were determined as 2.1 eV for diagonal migration and 2.6 eV along the zigzag path, respectively. Calculations further confirmed that the presence of vacancy defects induced considerable electronic structure modification of the host ML-BP; for example, the bandgap was reduced from 0.9 eV (for defect-free ML-BP) to 0.7 eV in the presence of vacancy lines with a concentration of 1.2 at.%. The present study expands the current understanding of the formation and dynamic behaviors of primary vacancy defects and illustrates methods available to alter the electronic structures of 2D BP materials. It can further serve as a guideline for the function-oriented design and fabrication of BP-based devices via precisely controlled defect engineering.

Impact of Defect and Doping on the Structural and Electronic Properties of Monolayer Boron Phosphide

First-principles calculations to investigate electronic structures and magnetic regulation of non-metallic elements doped BP with point defects

Influence of B doping and N doping on structure and electronic properties of graphene

First-principles calculations to investigate impact of Ga and In dopants on the electronic and optical features of boron phosphide

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Bp5 Monolayer With Multiferroicity And Negative Poisson'S Ratio: A Prediction By Global Optimization Method

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Electronic, optical, and adsorption properties of Li doped hexagonal boron nitride: A GW approach

In situ transmission electron microscopy study of the formation and migration of vacancy defects in atomically thin black phosphorus

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Influence of point defects on the electronic properties of boron nitride nanosheets

Impacts of Point Defects on Shallow Doping in Cubic Boron Arsenide: A First Principles Study

First-Principle Study on Electronic Structure and Magnetism in Doped Boron Phosphide Nanosheet

Effects of the Substitutions and Vacany Defects on the Stable monolayer structures of Black and Blue Arsenic Phosphorus: A First Principles Study

Bandgap Modulation in BP Field Effect Transistor and Its Applications

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Strain Stiffening, High Load-Invariant Hardness, And Electronic Anomalies Of Boron Phosphide Under Pressure