Abstract:Stacking two-dimensional (2D) materials into multi-layers or heterostructures, known as van der Waals (vdW) epitaxy, is an essential degree of freedom for tuning their properties on demand. Few-layer black phosphorus (FLBP), a material with high potential for nano- and optoelectronics applications, appears to have interlayer couplings much stronger than graphene and other 2D systems. Indeed, these couplings call into question whether the stacking of FLBP can be governed only by vdW interactions, which is of crucial importance for epitaxy and property refinement. Here, we perform a theoretical investigation of the vibrational properties of FLBP, which reflect directly its interlayer coupling, by discussing six Raman-observable phonons, including three optical, one breathing and two shear modes. With increasing sample thickness, we find anomalous redshifts of the frequencies for each optical mode but a blueshift for the armchair shear mode. Our calculations also show splitting of the phonon branches, due to anomalous surface phenomena, and strong phonon-phonon coupling. By computing uniaxial stress effects, inter-atomic force constants and electron densities, we provide a compelling demonstration that these properties are the consequence of strong and highly directional interlayer interactions arising from the electronic hybridization of the lone electron-pairs of FLBP, rather than from vdW interactions. This exceptional interlayer coupling mechanism controls the stacking stability of BP layers and thus opens a new avenue beyond vdW epitaxy for understanding the design of 2D heterostructures.

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus

Bp5 Monolayer With Multiferroicity And Negative Poisson'S Ratio: A Prediction By Global Optimization Method

Semiconductor-metal Transition Induced by Combined Electric Field and External Strain in Bilayer Phosphorene

Twist angle and electric gating controllable electronic structure of two-dimensional stacked BP homo-structure

Effects of Stacking Order, Layer Number and External Electric Field on Electronic Structures of Few-Layer C2n-H2d

Modulation of Electronic Properties of Hexagonal Boron Nitride Bilayers by an Electric Field: A First Principles Study

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Multilayer C2N: Effect of Stacking Order and Number of Layers on Bandgap and Its Controlled Electronic Properties by External Electric Field

Thickness-Dependent Electronic and Optical Properties of Bernal-Stacked Few-Layer Germanane

Ab Initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field

AA-Stacked Borophene-Graphene Bilayer With Covalent Bonding: Ab Initio Investigation of Structural, Electronic and Elastic Properties.

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Layer-dependent pressure effect on electronic structures of 2D black phosphorus

Impact of Defect and Doping on the Structural and Electronic Properties of Monolayer Boron Phosphide

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus