Abstract:Heterostructures of 2D materials host peculiar electronic, magnetic, and optical properties. In this respect, graphene is often a fundamental building block in the fabrication of efficient and long‐lasting devices. Here, a novel synthesis of a twisted graphene/borophene heterostructure is presented and its enhanced ambient stability is tested, allowingthe preservation of the metallic nature of borophene. Artificial 2D van der Waals heterostructures with controllable vertical stacking and rotational orientation exhibit multifaceted electronic properties that are appealing for applications in fields ranging from optoelectronics to energy storage. Along with transition metal dichalcogenides and graphene, borophene has recently emerged as a promising building block for 2D devices due to its conductive nature as well as its exceptional mechanical and electronic properties. Here, it is demonstrated that the combination of the dissolution‐segregation process and chemical vapor deposition allows for the synthesis of graphene/borophene heterostructures of the highest crystalline and chemical quality, in which graphene sits on top of the borophene layer with metallic character. The formation of laterally distinct micron‐sized areas allows a comparative study of borophene, graphene, and the graphene–borophene heterostack in terms of their electronic properties and stability in a reactive environment. Whereas pristine borophene is particularly prone to oxidation, the graphene–borophene heterostack is chemically inert and enables the conservation of borophene's character even after exposure to air. This study opens up new perspectives for the scalable synthesis of graphene–borophene heterostacks with enhanced ability to preserve the metallic character and electronic properties of borophene.

AA-Stacked Borophene-Graphene Bilayer With Covalent Bonding: Ab Initio Investigation of Structural, Electronic and Elastic Properties.

Bilayer borophene: The effects of substrate and stacking

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Unrevealing the structure and properties of {$α$}-sheet-based bilayer borophenes

Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction

Stability and Strength of Atomically Thin Borophene from First Principles Calculations

Electronic and Optical Properties of 2D Heterostructure Bilayers of Graphene, Borophene and 2D Boron Carbides from First Principles

Coupling Borophene to Graphene in Air‐Stable Heterostructures

Superhard and Superconducting Bilayer Borophene

Phase Transition of Layer-Stacked Borophene under Pressure

Strain Effects on Borophene: Ideal Strength, Negative Possion’s Ratio and Phonon Instability

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Effect of bilayer stacking on the atomic and electronic structure of twisted double bilayer graphene

Super-stretchable borophene and its stability under straining

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Electronic and mechanical properties of few-layer borophene

First Principle Study: Electronic Properties of Graphene on Boron Phosphide

Structural and electronic properties of AB- and AA-stacking bilayer-graphene intercalated by Li, Na, Ca, B, Al, Si, Ge, Ag, and Au atoms

Conversion of the stacking orientation of bilayer graphene due to \break the interaction of BN-dopants

Stacking order effects on the energetic stability and electronic properties of $n$-doped graphene/h-BN van der Waals heterostructures on SiC(0001)

Insight into Two-Dimensional Borophene: Five-Center Bond and Phonon-Mediated Superconductivity